Influence of the focused ion beam parameters on the etching of planar nanosized multigraphene/SiC field emitters

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/80832

Title:	Influence of the focused ion beam parameters on the etching of planar nanosized multigraphene/SiC field emitters
Authors:	Jityaev, I. L. Svetlichnyi, A. M. Avilov, V. I. Kots, I. N. Kolomiytsev, A. S. Ageev, O. A.
Issue Date:	2018
Publisher:	Ural Federal University
Citation:	Influence of the focused ion beam parameters on the etching of planar nanosized multigraphene/SiC field emitters / I. L. Jityaev, A. M. Svetlichnyi, V. I. Avilov, I. N. Kots, A. S. Kolomiytsev, O. A. Ageev // Scanning Probe Microscopy. Abstract Book of International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2018. — p. 131.
URI:	http://elar.urfu.ru/handle/10995/80832
Conference name:	International Conference "Scanning Probe Microscopy" ; International Workshop "Modern Nanotechnologies" ; International Youth Conference "Functional Imaging of Nanomaterials"
Conference date:	26.08.2018-29.08.2018
ISBN:	978-5-9500624-1-4
Sponsorship:	The equipment of the Collective Usage Center “Nanotechnologies” and the Research and Educational Center "Nanotechnologies" of Southern Federal University was used for this study. This work was funded by Internal grant of Southern Federal University No. VnGr-07/2017-26.
Origin:	International Conference "Scanning Probe Microscopy" ; International Workshop "Modern Nanotechnologies" ; International Youth Conference "Functional Imaging of Nanomaterials". — Ekaterinburg, 2018
Appears in Collections:	Scanning Probe Microscopy

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