Study of formation of high aspect GaAs structures based on the method of focused ion beams

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/80716

Title:	Study of formation of high aspect GaAs structures based on the method of focused ion beams
Authors:	Rezvan, A. A. Klimin, V. S. Solodovnik, M. S.
Issue Date:	2018
Publisher:	Ural Federal University
Citation:	Rezvan A. A. Study of formation of high aspect GaAs structures based on the method of focused ion beams / A. A. Rezvan, V. S. Klimin, M. S. Solodovnik // Scanning Probe Microscopy. Abstract Book of International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2018. — p. 190-191.
URI:	http://elar.urfu.ru/handle/10995/80716
Conference name:	International Conference "Scanning Probe Microscopy" ; International Workshop "Modern Nanotechnologies" ; International Youth Conference "Functional Imaging of Nanomaterials"
Conference date:	26.08.2018-29.08.2018
ISBN:	978-5-9500624-1-4
Sponsorship:	This work was supported by the Russian Science Foundation Grant No. 15-19-10006. The results were obtained using the equipment of the Research and Education Center and Center for Collective Use "Nanotechnologies" of Southern Federal University.
RSCF project card:	15-19-10006
Origin:	International Conference "Scanning Probe Microscopy" ; International Workshop "Modern Nanotechnologies" ; International Youth Conference "Functional Imaging of Nanomaterials". — Ekaterinburg, 2018
Appears in Collections:	Scanning Probe Microscopy

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