Formation of vacuum electronics elements by a combination of methods of focused ion beams and plasma layer etching on SiC

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/79113

Title:	Formation of vacuum electronics elements by a combination of methods of focused ion beams and plasma layer etching on SiC
Authors:	Rezvan, A. A. Klimin, V. S. Kots, I. N.
Issue Date:	2019
Publisher:	Ural Federal University
Citation:	Rezvan A. A. Formation of vacuum electronics elements by a combination of methods of focused ion beams and plasma layer etching on SiC / A. A. Rezvan, V. S. Klimin, I. N. Kots // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 240.
URI:	http://elar.urfu.ru/handle/10995/79113
Conference name:	3rd International Conference "Scanning Probe Microscopy" ; 4th Russia-China Workshop on Dielectric and Ferroelectric Materials ; International Youth Conference "Functional Imaging of nanomaterials"
Conference date:	25.08.2019-28.08.2019
ISBN:	978-5-9500624-2-1
Sponsorship:	This work was supported by Grant of the President of the Russian Federation No. МК-3512.2019.8 and Southern Federal University (grant VnGr-07/2017-02). The results were obtained using the equipment of the Research and Education Center "Nanotechnologies" of Southern Federal University.
Origin:	Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019
Appears in Collections:	Scanning Probe Microscopy

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