Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/75473
Title: Recrystallization and investigation of bismuth thin films by means of electron beam in transmission electron microscope
Authors: Kolosov, V. Y.
Yushkov, A. A.
Veretennikov, L. M.
Issue Date: 2018
Publisher: Institute of Physics Publishing
Citation: Kolosov V. Y. Recrystallization and investigation of bismuth thin films by means of electron beam in transmission electron microscope / V. Y. Kolosov, A. A. Yushkov, L. M. Veretennikov // Journal of Physics: Conference Series. — 2018. — Vol. 1115. — Iss. 3. — 32087.
Abstract: Thin bismuth films obtained by vacuum deposition were recrystallized under electron beam of scanning electron microscope at 5 kV and examined in a transmission electron microscope at 200 kV. In recrystallized films, various microstructures were detected: single-crystal, polycrystalline and amorphous regions, more or less faceted grains, single crystals and untransparent drop-shaped particles. In the crystallized film, a strong internal bending of the crystal lattice is detected, up to 110 deg/μm. © Published under licence by IOP Publishing Ltd.
Keywords: AMORPHOUS FILMS
BISMUTH
ELECTRON BEAMS
ELECTRONS
FLUXES
RECRYSTALLIZATION (METALLURGY)
SCANNING ELECTRON MICROSCOPY
SINGLE CRYSTALS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
AMORPHOUS REGIONS
BISMUTH FILM
BISMUTH THIN FILMS
CRYSTALLIZED FILMS
FACETED GRAINS
INTERNAL BENDING
POLYCRYSTALLINE
SHAPED PARTICLES
RADIATION EFFECTS
URI: http://elar.urfu.ru/handle/10995/75473
Access: info:eu-repo/semantics/openAccess
Conference name: 6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018
Conference date: 16 September 2018 through 22 September 2018
RSCI ID: 38679204
SCOPUS ID: 85058216525
WOS ID: 000546577800129
PURE ID: 8424422
ISSN: 1742-6588
DOI: 10.1088/1742-6596/1115/3/032087
Sponsorship: Partial support of project 3.6121.2017/8.9 (The Ministry of Education and Science of the Russian Federation) and Agreement No 02.A03.21.0006 (Act 211 Government of the Russian Federation) is acknowledged.
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Files in This Item:
File Description SizeFormat 
10.1088-1742-6596-1115-3-032087.pdf3,26 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.