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Название: Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments
Авторы: Kovalev, M.
Podlesnykh, I.
Nastulyavichus, A.
Stsepuro, N.
Mushkarina, I.
Platonov, P.
Terukov, E.
Abolmasov, S.
Dunaev, A.
Akhmatkhanov, A.
Shur, V.
Kudryashov, S.
Дата публикации: 2023
Издатель: MDPI
Библиографическое описание: Kovalev, M, Podlesnykh, I, Nastulyavichus, A, Stsepuro, N, Mushkarina, I, Platonov, P, Terukov, E, Abolmasov, S, Dunaev, A, Akhmatkhanov, A, Shur, V & Kudryashov, S 2023, 'Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments', Materials, Том. 16, № 6, 2350. https://doi.org/10.3390/ma16062350
Kovalev, M., Podlesnykh, I., Nastulyavichus, A., Stsepuro, N., Mushkarina, I., Platonov, P., Terukov, E., Abolmasov, S., Dunaev, A., Akhmatkhanov, A., Shur, V., & Kudryashov, S. (2023). Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments. Materials, 16(6), [2350]. https://doi.org/10.3390/ma16062350
Аннотация: Light-trapping structures formed on surfaces of various materials have attracted much attention in recent years due to their important role in many applications of science and technology. This article discusses various methods for manufacturing light-trapping “black” silicon, namely laser, chemical and hybrid chemical/laser ones. In addition to the widely explored laser texturing and chemical etching methods, we develop a hybrid chemical/laser texturing method, consisting in laser post-texturing of pyramidal structures obtained after chemical etching. After laser treatments the surface morphology was represented by a chaotic relief of microcones, while after chemical treatment it acquired a chaotic pyramidal relief. Moreover, laser texturing of preliminarily chemically microtextured silicon wafers is shown to take five-fold less time compared to bare flat silicon. In this case, the chemically/laser-treated samples exhibit average total reflectance in the spectral range of 250–1100 nm lower by 7–10% than after the purely chemical treatment. © 2023 by the authors.
Ключевые слова: CHEMICAL ETCHING
LASER TEXTURING
LIGHT-TRAPPING
REFLECTION COEFFICIENT
SURFACE MICROSTRUCTURES
ETCHING
MORPHOLOGY
SILICON WAFERS
SURFACE MORPHOLOGY
BROADBAND LIGHT
CHAOTICS
CHEMICAL ETCHING
CHEMICAL TREATMENTS
LASER TEXTURING
LASER TREATMENT
LIGHT TRAPPING STRUCTURES
LIGHT-TRAPPING
SURFACE MICROSTRUCTURES
THIN FILM SILICON
REFLECTION
URI: http://elar.urfu.ru/handle/10995/130365
Условия доступа: info:eu-repo/semantics/openAccess
cc-by
Текст лицензии: https://creativecommons.org/licenses/by/4.0/
Идентификатор SCOPUS: 85151509978
Идентификатор WOS: 000959743200001
Идентификатор PURE: 37080864
ISSN: 1996-1944
DOI: 10.3390/ma16062350
Сведения о поддержке: Ministry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677
We thank the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg.#2968), which is supported by the Ministry of Science and Higher Education RF (Project #075-15-2021-677) for the provided research equipment; and Evgeny Kuzmin from Lebedev Physical Institute for the preparation .
This research was funded by the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program).
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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Лицензия на ресурс: Лицензия Creative Commons Creative Commons