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dc.contributor.authorKovalev, M.en
dc.contributor.authorPodlesnykh, I.en
dc.contributor.authorNastulyavichus, A.en
dc.contributor.authorStsepuro, N.en
dc.contributor.authorMushkarina, I.en
dc.contributor.authorPlatonov, P.en
dc.contributor.authorTerukov, E.en
dc.contributor.authorAbolmasov, S.en
dc.contributor.authorDunaev, A.en
dc.contributor.authorAkhmatkhanov, A.en
dc.contributor.authorShur, V.en
dc.contributor.authorKudryashov, S.en
dc.date.accessioned2024-04-05T16:18:59Z-
dc.date.available2024-04-05T16:18:59Z-
dc.date.issued2023-
dc.identifier.citationKovalev, M, Podlesnykh, I, Nastulyavichus, A, Stsepuro, N, Mushkarina, I, Platonov, P, Terukov, E, Abolmasov, S, Dunaev, A, Akhmatkhanov, A, Shur, V & Kudryashov, S 2023, 'Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments', Materials, Том. 16, № 6, 2350. https://doi.org/10.3390/ma16062350harvard_pure
dc.identifier.citationKovalev, M., Podlesnykh, I., Nastulyavichus, A., Stsepuro, N., Mushkarina, I., Platonov, P., Terukov, E., Abolmasov, S., Dunaev, A., Akhmatkhanov, A., Shur, V., & Kudryashov, S. (2023). Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments. Materials, 16(6), [2350]. https://doi.org/10.3390/ma16062350apa_pure
dc.identifier.issn1996-1944-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Gold, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85151509978&doi=10.3390%2fma16062350&partnerID=40&md5=1e5bec93753518b1c1f594ea8e8add961
dc.identifier.otherhttps://www.mdpi.com/1996-1944/16/6/2350/pdf?version=1678866072pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/130365-
dc.description.abstractLight-trapping structures formed on surfaces of various materials have attracted much attention in recent years due to their important role in many applications of science and technology. This article discusses various methods for manufacturing light-trapping “black” silicon, namely laser, chemical and hybrid chemical/laser ones. In addition to the widely explored laser texturing and chemical etching methods, we develop a hybrid chemical/laser texturing method, consisting in laser post-texturing of pyramidal structures obtained after chemical etching. After laser treatments the surface morphology was represented by a chaotic relief of microcones, while after chemical treatment it acquired a chaotic pyramidal relief. Moreover, laser texturing of preliminarily chemically microtextured silicon wafers is shown to take five-fold less time compared to bare flat silicon. In this case, the chemically/laser-treated samples exhibit average total reflectance in the spectral range of 250–1100 nm lower by 7–10% than after the purely chemical treatment. © 2023 by the authors.en
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677en
dc.description.sponsorshipWe thank the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg.#2968), which is supported by the Ministry of Science and Higher Education RF (Project #075-15-2021-677) for the provided research equipment; and Evgeny Kuzmin from Lebedev Physical Institute for the preparation .en
dc.description.sponsorshipThis research was funded by the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherMDPIen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/unpaywall
dc.sourceMaterials2
dc.sourceMaterialsen
dc.subjectCHEMICAL ETCHINGen
dc.subjectLASER TEXTURINGen
dc.subjectLIGHT-TRAPPINGen
dc.subjectREFLECTION COEFFICIENTen
dc.subjectSURFACE MICROSTRUCTURESen
dc.subjectETCHINGen
dc.subjectMORPHOLOGYen
dc.subjectSILICON WAFERSen
dc.subjectSURFACE MORPHOLOGYen
dc.subjectBROADBAND LIGHTen
dc.subjectCHAOTICSen
dc.subjectCHEMICAL ETCHINGen
dc.subjectCHEMICAL TREATMENTSen
dc.subjectLASER TEXTURINGen
dc.subjectLASER TREATMENTen
dc.subjectLIGHT TRAPPING STRUCTURESen
dc.subjectLIGHT-TRAPPINGen
dc.subjectSURFACE MICROSTRUCTURESen
dc.subjectTHIN FILM SILICONen
dc.subjectREFLECTIONen
dc.titleEfficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatmentsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.type|info:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.3390/ma16062350-
dc.identifier.scopus85151509978-
local.contributor.employeeKovalev, M., Lebedev Physical Institute, Moscow, 119991, Russian Federation, School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeePodlesnykh, I., Lebedev Physical Institute, Moscow, 119991, Russian Federation, Laser and Optoelectronic Systems Department, Bauman Moscow State Technical University, 2nd Baumanskaya St. 5/1, Moscow, 105005, Russian Federationen
local.contributor.employeeNastulyavichus, A., Lebedev Physical Institute, Moscow, 119991, Russian Federationen
local.contributor.employeeStsepuro, N., Lebedev Physical Institute, Moscow, 119991, Russian Federationen
local.contributor.employeeMushkarina, I., Lebedev Physical Institute, Moscow, 119991, Russian Federationen
local.contributor.employeePlatonov, P., Laser and Optoelectronic Systems Department, Bauman Moscow State Technical University, 2nd Baumanskaya St. 5/1, Moscow, 105005, Russian Federationen
local.contributor.employeeTerukov, E., Department of Electronics, St. Petersburg State Electrotechnical University, ul. Professora Popova 5, St. Petersburg, 197022, Russian Federationen
local.contributor.employeeAbolmasov, S., R&D Center of Thin Film Technologies in Energetics, St. Petersburg, 194064, Russian Federationen
local.contributor.employeeDunaev, A., All-Russian Research Institute for Optical and Physical Measurements, Moscow, 119361, Russian Federationen
local.contributor.employeeAkhmatkhanov, A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeShur, V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeKudryashov, S., Lebedev Physical Institute, Moscow, 119991, Russian Federation, School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.issue6-
local.volume16-
dc.identifier.wos000959743200001-
local.contributor.departmentLebedev Physical Institute, Moscow, 119991, Russian Federationen
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.departmentLaser and Optoelectronic Systems Department, Bauman Moscow State Technical University, 2nd Baumanskaya St. 5/1, Moscow, 105005, Russian Federationen
local.contributor.departmentDepartment of Electronics, St. Petersburg State Electrotechnical University, ul. Professora Popova 5, St. Petersburg, 197022, Russian Federationen
local.contributor.departmentR&D Center of Thin Film Technologies in Energetics, St. Petersburg, 194064, Russian Federationen
local.contributor.departmentAll-Russian Research Institute for Optical and Physical Measurements, Moscow, 119361, Russian Federationen
local.identifier.pure37080864-
local.description.order2350-
local.identifier.eid2-s2.0-85151509978-
local.identifier.wosWOS:000959743200001-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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