Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/130365
Title: | Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments |
Authors: | Kovalev, M. Podlesnykh, I. Nastulyavichus, A. Stsepuro, N. Mushkarina, I. Platonov, P. Terukov, E. Abolmasov, S. Dunaev, A. Akhmatkhanov, A. Shur, V. Kudryashov, S. |
Issue Date: | 2023 |
Publisher: | MDPI |
Citation: | Kovalev, M, Podlesnykh, I, Nastulyavichus, A, Stsepuro, N, Mushkarina, I, Platonov, P, Terukov, E, Abolmasov, S, Dunaev, A, Akhmatkhanov, A, Shur, V & Kudryashov, S 2023, 'Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments', Materials, Том. 16, № 6, 2350. https://doi.org/10.3390/ma16062350 Kovalev, M., Podlesnykh, I., Nastulyavichus, A., Stsepuro, N., Mushkarina, I., Platonov, P., Terukov, E., Abolmasov, S., Dunaev, A., Akhmatkhanov, A., Shur, V., & Kudryashov, S. (2023). Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments. Materials, 16(6), [2350]. https://doi.org/10.3390/ma16062350 |
Abstract: | Light-trapping structures formed on surfaces of various materials have attracted much attention in recent years due to their important role in many applications of science and technology. This article discusses various methods for manufacturing light-trapping “black” silicon, namely laser, chemical and hybrid chemical/laser ones. In addition to the widely explored laser texturing and chemical etching methods, we develop a hybrid chemical/laser texturing method, consisting in laser post-texturing of pyramidal structures obtained after chemical etching. After laser treatments the surface morphology was represented by a chaotic relief of microcones, while after chemical treatment it acquired a chaotic pyramidal relief. Moreover, laser texturing of preliminarily chemically microtextured silicon wafers is shown to take five-fold less time compared to bare flat silicon. In this case, the chemically/laser-treated samples exhibit average total reflectance in the spectral range of 250–1100 nm lower by 7–10% than after the purely chemical treatment. © 2023 by the authors. |
Keywords: | CHEMICAL ETCHING LASER TEXTURING LIGHT-TRAPPING REFLECTION COEFFICIENT SURFACE MICROSTRUCTURES ETCHING MORPHOLOGY SILICON WAFERS SURFACE MORPHOLOGY BROADBAND LIGHT CHAOTICS CHEMICAL ETCHING CHEMICAL TREATMENTS LASER TEXTURING LASER TREATMENT LIGHT TRAPPING STRUCTURES LIGHT-TRAPPING SURFACE MICROSTRUCTURES THIN FILM SILICON REFLECTION |
URI: | http://elar.urfu.ru/handle/10995/130365 |
Access: | info:eu-repo/semantics/openAccess cc-by |
License text: | https://creativecommons.org/licenses/by/4.0/ |
SCOPUS ID: | 85151509978 |
WOS ID: | 000959743200001 |
PURE ID: | 37080864 |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma16062350 |
Sponsorship: | Ministry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677 We thank the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg.#2968), which is supported by the Ministry of Science and Higher Education RF (Project #075-15-2021-677) for the provided research equipment; and Evgeny Kuzmin from Lebedev Physical Institute for the preparation . This research was funded by the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program). |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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