Thickness dependence of conductivity in Bi2Se3 topological insulator

Abstract

The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample. © Published under licence by IOP Publishing Ltd.