Thickness dependence of conductivity in Bi2Se3 topological insulator

Chistyakov, V. V.; Domozhirova, A. N.; Huang, J. C. A.; Marchenkov, V. V.

doi:10.1088/1742-6596/1389/1/012051

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Поле DC	Значение	Язык
dc.contributor.author	Chistyakov, V. V.	en
dc.contributor.author	Domozhirova, A. N.	en
dc.contributor.author	Huang, J. C. A.	en
dc.contributor.author	Marchenkov, V. V.	en
dc.date.accessioned	2020-10-20T16:36:14Z	-
dc.date.available	2020-10-20T16:36:14Z	-
dc.date.issued	2019	-
dc.identifier.citation	Chistyakov V. V. Thickness dependence of conductivity in Bi2Se3 topological insulator / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, V. V. Marchenkov. — DOI 10.1088/1742-6596/1389/1/012051 // Journal of Physics: Conference Series. — 2019. — Vol. 1. — Iss. 1389. — 12051.	en
dc.identifier.issn	1742-6588	-
dc.identifier.other	https://doi.org/10.1088/1742-6596/1389/1/012051	pdf
dc.identifier.other	1	good_DOI
dc.identifier.other	d4336dfc-b95c-4d9c-9e33-cd7944d28cbe	pure_uuid
dc.identifier.other	http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85076753206	m
dc.identifier.uri	http://elar.urfu.ru/handle/10995/92547	-
dc.description.abstract	The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample. © Published under licence by IOP Publishing Ltd.	en
dc.description.sponsorship	Russian Foundation for Basic Research, RFBR: 17-52-52008	en
dc.description.sponsorship	Government Council on Grants, Russian Federation: 02.	en
dc.description.sponsorship	Ministry of Science and Higher Education of the Russian Federation: АААА-А18-118020290104-2	en
dc.description.sponsorship	This work was partly supported by the state assignment of Ministry of High Education and Science of Russia (theme “Spin” No. АААА-А18-118020290104-2), by the RFBR (project No. 17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006).	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Institute of Physics Publishing	en
dc.rights	info:eu-repo/semantics/openAccess	en
dc.source	Journal of Physics: Conference Series	en
dc.subject	ELECTRIC CONDUCTIVITY	en
dc.subject	ELECTRIC INSULATORS	en
dc.subject	SELENIUM COMPOUNDS	en
dc.subject	SINGLE CRYSTALS	en
dc.subject	TOPOLOGICAL INSULATORS	en
dc.subject	DIRECT CURRENT	en
dc.subject	ELECTRICAL CONDUCTIVITY	en
dc.subject	ELECTRICAL RESISTIVITY OF THIN FILMS	en
dc.subject	LINEAR DEPENDENCE	en
dc.subject	NON-UNIFORM DISTRIBUTION	en
dc.subject	SIZE EFFECTS	en
dc.subject	TEMPERATURE RANGE	en
dc.subject	THICKNESS DEPENDENCE	en
dc.subject	BISMUTH COMPOUNDS	en
dc.title	Thickness dependence of conductivity in Bi2Se3 topological insulator	en
dc.type	Conference Paper	en
dc.type	info:eu-repo/semantics/conferenceObject	en
dc.type	info:eu-repo/semantics/publishedVersion	en
dc.identifier.doi	10.1088/1742-6596/1389/1/012051	-
dc.identifier.scopus	85076753206	-
local.affiliation	M.N. Mikheev Institute of Metal Physics UB RAS, Ekaterinburg, 620108, Russian Federation
local.affiliation	National Cheng Kung University, Tainan, 70101, Taiwan
local.affiliation	Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employee	Chistyakov, V.V., M.N. Mikheev Institute of Metal Physics UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employee	Domozhirova, A.N., M.N. Mikheev Institute of Metal Physics UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employee	Huang, J.C.A., National Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.employee	Marchenkov, V.V., M.N. Mikheev Institute of Metal Physics UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.issue	1389	-
local.volume	1	-
dc.identifier.wos	000562319800051	-
local.identifier.pure	11765748	-
local.description.order	12051	-
local.identifier.eid	2-s2.0-85076753206	-
local.fund.rffi	17-52-52008	-
local.identifier.wos	WOS:000562319800051	-
Располагается в коллекциях:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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