Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/92547
Title: Thickness dependence of conductivity in Bi2Se3 topological insulator
Authors: Chistyakov, V. V.
Domozhirova, A. N.
Huang, J. C. A.
Marchenkov, V. V.
Issue Date: 2019
Publisher: Institute of Physics Publishing
Citation: Chistyakov V. V. Thickness dependence of conductivity in Bi2Se3 topological insulator / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, V. V. Marchenkov. — DOI 10.1088/1742-6596/1389/1/012051 // Journal of Physics: Conference Series. — 2019. — Vol. 1. — Iss. 1389. — 12051.
Abstract: The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample. © Published under licence by IOP Publishing Ltd.
Keywords: ELECTRIC CONDUCTIVITY
ELECTRIC INSULATORS
SELENIUM COMPOUNDS
SINGLE CRYSTALS
TOPOLOGICAL INSULATORS
DIRECT CURRENT
ELECTRICAL CONDUCTIVITY
ELECTRICAL RESISTIVITY OF THIN FILMS
LINEAR DEPENDENCE
NON-UNIFORM DISTRIBUTION
SIZE EFFECTS
TEMPERATURE RANGE
THICKNESS DEPENDENCE
BISMUTH COMPOUNDS
URI: http://hdl.handle.net/10995/92547
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85076753206
WOS ID: 000562319800051
PURE ID: 11765748
ISSN: 1742-6588
DOI: 10.1088/1742-6596/1389/1/012051
metadata.dc.description.sponsorship: Russian Foundation for Basic Research, RFBR: 17-52-52008
Government Council on Grants, Russian Federation: 02.
Ministry of Science and Higher Education of the Russian Federation: АААА-А18-118020290104-2
This work was partly supported by the state assignment of Ministry of High Education and Science of Russia (theme “Spin” No. АААА-А18-118020290104-2), by the RFBR (project No. 17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006).
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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