ISSN: 2310-757X
Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/79105| Title: | Investigation of profiling of silicon surface by local anodic oxidation nanolithography for memristors crossbar architecture creating |
| Authors: | Polyakova, V. V. Kots, I. N. Smirnov, V. A. |
| Issue Date: | 2019 |
| Publisher: | Ural Federal University |
| Citation: | Polyakova V. V. Investigation of profiling of silicon surface by local anodic oxidation nanolithography for memristors crossbar architecture creating / V. V. Polyakova, I. N. Kots, V. A. Smirnov // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 232. |
| URI: | http://elar.urfu.ru/handle/10995/79105 |
| Conference name: | 3rd International Conference "Scanning Probe Microscopy" ; 4th Russia-China Workshop on Dielectric and Ferroelectric Materials ; International Youth Conference "Functional Imaging of nanomaterials" |
| Conference date: | 25.08.2019-28.08.2019 |
| ISBN: | 978-5-9500624-2-1 |
| metadata.dc.description.sponsorship: | This work was supported by the FASIE. The work was done on the equipment of Research and Education Centre “Nanotechnology” and Collective Use Centre “Nanotechnology,” Southern Federal University. |
| Origin: | Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019 |
| Appears in Collections: | Scanning Probe Microscopy |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 978-5-9500624-2-1_2019_189.pdf | 230,5 kB | Adobe PDF | View/Open |
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