Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/51136
Title: Influence of the composition on electrical properties of low-temperature ionic conductors in the Cu1-x Ag (x) GeAsSe3 system
Authors: Kheifets, O. L.
Mel'nikova, N. V.
Filippov, A. L.
Shakirov, E. F.
Babushkin, A. N.
Nugaeva, L. L.
Issue Date: 2012
Publisher: Pleiades Publishing Ltd
Citation: Influence of the composition on electrical properties of low-temperature ionic conductors in the Cu1-x Ag (x) GeAsSe3 system / O. L. Kheifets, N. V. Mel'nikova, A. L. Filippov, E. F. Shakirov, A. N. Babushkin, L. L. Nugaeva // Physics of the Solid State. — 2012. — Vol. 54. — № 8. — P. 1562-1565.
Abstract: The chalcogenides Cu 1 - xAg xGeAsSe 3 (x = 0. 5, 0. 8, 0. 9) have been synthesized and their electrical properties have been studied at low temperatures. Compounds of this type are electron-ionic conductors with a mixed character of conduction. It has been shown that the substitution of copper atoms for a part of silver atoms in the AgGeAsSe 3 compound leads to a decrease in the total conductivity, a decrease in the fraction of ionic component of the conductivity, a significant increase in the polarization times, an increase in the temperature of the onset of a noticeable contribution (as compared to the electron contribution) of the ionic transport, and a decrease in the activation energy of carriers. © 2012 Pleiades Publishing, Ltd.
URI: http://elar.urfu.ru/handle/10995/51136
SCOPUS ID: 84865519706
WOS ID: 000307293400004
PURE ID: 1077687
ISSN: 1063-7834
1090-6460
DOI: 10.1134/S1063783412080136
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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