Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/27539
Title: Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport
Authors: Germanenko, A. V.
Minkov, G. M.
Rut, O. E.
Sherstobitov, A. A.
Dvoretsky, S. A.
Mikhailov, N. N.
Issue Date: 2013
Citation: Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport / A. V. Germanenko, G. M. Minkov, O. E. Rut [et al.] // Semiconductors. — 2013. — Vol. 47. — № 12. — P. 1562-1566.
Abstract: The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model. © 2013 Pleiades Publishing, Ltd.
URI: http://elar.urfu.ru/handle/10995/27539
SCOPUS ID: 84890107349
WOS ID: 000328260100004
PURE ID: 841259
ISSN: 1063-7826
DOI: 10.1134/S1063782613120063
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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