The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics

Zhidkov, I. S.; McLeod, J. A.; Kurmaev, E. Z.; Korotin, M. A.; Kukharenko, A. I.; Savva, A.; Choulis, S. A.; Korotin, D. M.; Cholakh, S. O.

doi:10.1063/1.4958892

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/132511

Title:	The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics
Authors:	Zhidkov, I. S. McLeod, J. A. Kurmaev, E. Z. Korotin, M. A. Kukharenko, A. I. Savva, A. Choulis, S. A. Korotin, D. M. Cholakh, S. O.
Issue Date:	2016
Publisher:	American Institute of Physics Inc.
Citation:	Zhidkov, IS, McLeod, JA, Kurmaev, EZ, Korotin, MA, Kukharenko, AI, Savva, A, Choulis, SA, Korotin, DM & Cholakh, SO 2016, 'The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics', Applied Physics Letters, vol. 109, no. 2, 022108. https://doi.org/10.1063/1.4958892 Zhidkov, I. S., McLeod, J. A., Kurmaev, E. Z., Korotin, M. A., Kukharenko, A. I., Savva, A., Choulis, S. A., Korotin, D. M., & Cholakh, S. O. (2016). The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics. Applied Physics Letters, 109(2), [022108]. https://doi.org/10.1063/1.4958892
Abstract:	We study the low-temperature solution processed TiOx films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti3+ present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiOx film as an electron selective contact may increase the fraction of Ti3+ present. We provide evidence that the number of charge carriers in TiOx can be significantly varied and this might influence the performance of inverted OPVs. © 2016 Author(s).
Keywords:	CORE LEVELS ELECTRONIC STRUCTURE ENERGY GAP TEMPERATURE DEFECT STATE ELECTRONIC STRUCTURE CALCULATIONS LOW TEMPERATURE SOLUTIONS ORGANIC PHOTOVOLTAIC (OPV) ORGANIC PHOTOVOLTAICS SELECTIVE CONTACTS SOLUTION-PROCESSED X RAY PHOTOELECTRON SPECTROSCOPY
URI:	http://elar.urfu.ru/handle/10995/132511
Access:	info:eu-repo/semantics/openAccess
SCOPUS ID:	84978732072
WOS ID:	000381155200034
PURE ID:	1056164
ISSN:	0003-6951
DOI:	10.1063/1.4958892
Sponsorship:	National Natural Science Foundation of China, NSFC: 11404232; Research Promotion Foundation, RPF: NEA TPATH/0308/06; China Postdoctoral Science Foundation: 2014M551645; Russian Science Foundation, RSF: 14-22-00004; European Regional Development Fund, FEDER; Government Council on Grants, Russian Federation This research was done with partial support from the Government of the Russian Federation (Act 211, Agreement No. 02.A03.21.0006), the European Regional Development Fund, and the Republic of Cyprus through the Research Promotion Foundation (Strategic Infrastructure Project NEA TPATH/0308/06), the National Natural Science Foundation of China (Project No. 11404232), and the China Postdoctoral Science Foundation (Project No. 2014M551645). The CPA calculations were supported by the Russian Science Foundation (Project No. 14-22-00004).
RSCF project card:	14-22-00004
Appears in Collections:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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