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dc.contributor.authorZhidkov, I. S.en
dc.contributor.authorMcLeod, J. A.en
dc.contributor.authorKurmaev, E. Z.en
dc.contributor.authorKorotin, M. A.en
dc.contributor.authorKukharenko, A. I.en
dc.contributor.authorSavva, A.en
dc.contributor.authorChoulis, S. A.en
dc.contributor.authorKorotin, D. M.en
dc.contributor.authorCholakh, S. O.en
dc.date.accessioned2024-04-22T18:30:06Z-
dc.date.available2024-04-22T18:30:06Z-
dc.date.issued2016-
dc.identifier.citationZhidkov, IS, McLeod, JA, Kurmaev, EZ, Korotin, MA, Kukharenko, AI, Savva, A, Choulis, SA, Korotin, DM & Cholakh, SO 2016, 'The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics', Applied Physics Letters, vol. 109, no. 2, 022108. https://doi.org/10.1063/1.4958892harvard_pure
dc.identifier.citationZhidkov, I. S., McLeod, J. A., Kurmaev, E. Z., Korotin, M. A., Kukharenko, A. I., Savva, A., Choulis, S. A., Korotin, D. M., & Cholakh, S. O. (2016). The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics. Applied Physics Letters, 109(2), [022108]. https://doi.org/10.1063/1.4958892apa_pure
dc.identifier.issn0003-6951
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://ktisis.cut.ac.cy/bitstream/20.500.14279/9120/2/coulis%2c%20savva.pdfpdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/132511-
dc.description.abstractWe study the low-temperature solution processed TiOx films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti3+ present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiOx film as an electron selective contact may increase the fraction of Ti3+ present. We provide evidence that the number of charge carriers in TiOx can be significantly varied and this might influence the performance of inverted OPVs. © 2016 Author(s).en
dc.description.sponsorshipNational Natural Science Foundation of China, NSFC: 11404232; Research Promotion Foundation, RPF: NEA TPATH/0308/06; China Postdoctoral Science Foundation: 2014M551645; Russian Science Foundation, RSF: 14-22-00004; European Regional Development Fund, FEDER; Government Council on Grants, Russian Federationen
dc.description.sponsorshipThis research was done with partial support from the Government of the Russian Federation (Act 211, Agreement No. 02.A03.21.0006), the European Regional Development Fund, and the Republic of Cyprus through the Research Promotion Foundation (Strategic Infrastructure Project NEA TPATH/0308/06), the National Natural Science Foundation of China (Project No. 11404232), and the China Postdoctoral Science Foundation (Project No. 2014M551645). The CPA calculations were supported by the Russian Science Foundation (Project No. 14-22-00004).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceApplied Physics Letters2
dc.sourceApplied Physics Lettersen
dc.subjectCORE LEVELSen
dc.subjectELECTRONIC STRUCTUREen
dc.subjectENERGY GAPen
dc.subjectTEMPERATUREen
dc.subjectDEFECT STATEen
dc.subjectELECTRONIC STRUCTURE CALCULATIONSen
dc.subjectLOW TEMPERATURE SOLUTIONSen
dc.subjectORGANIC PHOTOVOLTAIC (OPV)en
dc.subjectORGANIC PHOTOVOLTAICSen
dc.subjectSELECTIVE CONTACTSen
dc.subjectSOLUTION-PROCESSEDen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.titleThe appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaicsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.1063/1.4958892-
dc.identifier.scopus84978732072-
local.contributor.employeeZhidkov, I.S., M. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.contributor.employeeMcLeod, J.A., Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, Chinaen
local.contributor.employeeKurmaev, E.Z., M. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.contributor.employeeKorotin, M.A., M. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federationen
local.contributor.employeeKukharenko, A.I., M. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.contributor.employeeSavva, A., Molecular Electronics and Photonics Research Unit, Department of Mechanical Engineering and Materials Science and Engineering, Cyprus University of Technology, Kitiou Kiprianou Str. 45, Limassol, 3603, Cyprusen
local.contributor.employeeChoulis, S.A., Molecular Electronics and Photonics Research Unit, Department of Mechanical Engineering and Materials Science and Engineering, Cyprus University of Technology, Kitiou Kiprianou Str. 45, Limassol, 3603, Cyprusen
local.contributor.employeeKorotin, D.M., M. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.contributor.employeeCholakh, S.O., Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.issue2
local.volume109
dc.identifier.wos000381155200034-
local.contributor.departmentM. N. Mikheev Institute of Metal Physics, Russian Academy of Sciences-Ural Branch, S. Kovalevskoi Str. 18, Yekaterinburg, 620990, Russian Federationen
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federationen
local.contributor.departmentInstitute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, Chinaen
local.contributor.departmentMolecular Electronics and Photonics Research Unit, Department of Mechanical Engineering and Materials Science and Engineering, Cyprus University of Technology, Kitiou Kiprianou Str. 45, Limassol, 3603, Cyprusen
local.identifier.pure1056164-
local.description.order022108
local.identifier.eid2-s2.0-84978732072-
local.fund.rsf14-22-00004
local.identifier.wosWOS:000381155200034-
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