The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics

Zhidkov, I. S.; McLeod, J. A.; Kurmaev, E. Z.; Korotin, M. A.; Kukharenko, A. I.; Savva, A.; Choulis, S. A.; Korotin, D. M.; Cholakh, S. O.

doi:10.1063/1.4958892

Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/132511

Название:	The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics
Авторы:	Zhidkov, I. S. McLeod, J. A. Kurmaev, E. Z. Korotin, M. A. Kukharenko, A. I. Savva, A. Choulis, S. A. Korotin, D. M. Cholakh, S. O.
Дата публикации:	2016
Издатель:	American Institute of Physics Inc.
Библиографическое описание:	Zhidkov, IS, McLeod, JA, Kurmaev, EZ, Korotin, MA, Kukharenko, AI, Savva, A, Choulis, SA, Korotin, DM & Cholakh, SO 2016, 'The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics', Applied Physics Letters, vol. 109, no. 2, 022108. https://doi.org/10.1063/1.4958892 Zhidkov, I. S., McLeod, J. A., Kurmaev, E. Z., Korotin, M. A., Kukharenko, A. I., Savva, A., Choulis, S. A., Korotin, D. M., & Cholakh, S. O. (2016). The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics. Applied Physics Letters, 109(2), [022108]. https://doi.org/10.1063/1.4958892
Аннотация:	We study the low-temperature solution processed TiOx films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti3+ present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiOx film as an electron selective contact may increase the fraction of Ti3+ present. We provide evidence that the number of charge carriers in TiOx can be significantly varied and this might influence the performance of inverted OPVs. © 2016 Author(s).
Ключевые слова:	CORE LEVELS ELECTRONIC STRUCTURE ENERGY GAP TEMPERATURE DEFECT STATE ELECTRONIC STRUCTURE CALCULATIONS LOW TEMPERATURE SOLUTIONS ORGANIC PHOTOVOLTAIC (OPV) ORGANIC PHOTOVOLTAICS SELECTIVE CONTACTS SOLUTION-PROCESSED X RAY PHOTOELECTRON SPECTROSCOPY
URI:	http://elar.urfu.ru/handle/10995/132511
Условия доступа:	info:eu-repo/semantics/openAccess
Идентификатор SCOPUS:	84978732072
Идентификатор WOS:	000381155200034
Идентификатор PURE:	1056164
ISSN:	0003-6951
DOI:	10.1063/1.4958892
Сведения о поддержке:	National Natural Science Foundation of China, NSFC: 11404232; Research Promotion Foundation, RPF: NEA TPATH/0308/06; China Postdoctoral Science Foundation: 2014M551645; Russian Science Foundation, RSF: 14-22-00004; European Regional Development Fund, FEDER; Government Council on Grants, Russian Federation This research was done with partial support from the Government of the Russian Federation (Act 211, Agreement No. 02.A03.21.0006), the European Regional Development Fund, and the Republic of Cyprus through the Research Promotion Foundation (Strategic Infrastructure Project NEA TPATH/0308/06), the National Natural Science Foundation of China (Project No. 11404232), and the China Postdoctoral Science Foundation (Project No. 2014M551645). The CPA calculations were supported by the Russian Science Foundation (Project No. 14-22-00004).
Карточка проекта РНФ:	14-22-00004
Располагается в коллекциях:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:

Файл	Описание	Размер	Формат
2-s2.0-84978732072.pdf		766,83 kB	Adobe PDF	Просмотреть/Открыть

Показать полное описание ресурса Статистика

Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.