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http://elar.urfu.ru/handle/10995/131108
Title: | Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films |
Authors: | Kozhevnikova, N. S. Maskaeva, L. N. Enyashin, A. N. Tyutyunnik, A. P. Lipina, O. A. Selyanin, I. O. Markov, V. F. |
Issue Date: | 2023 |
Publisher: | ITMO University |
Citation: | Kozhevnikova, N, Maskaeva, L, Enyashin, A, Tyutyunnik, A, Lipina, O, Selyanin, I & Markov, VF 2023, 'Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films', Nanosystems: Physics, Chemistry, Mathematics, Том. 14, № 6, стр. 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704 Kozhevnikova, N., Maskaeva, L., Enyashin, A., Tyutyunnik, A., Lipina, O., Selyanin, I., & Markov, V. F. (2023). Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Physics, Chemistry, Mathematics, 14(6), 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704 |
Abstract: | Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023. |
Keywords: | CHEMICAL BATH DEPOSITION FORMATION MECHANISM P-TYPE CONDUCTIVITY QUANTUM-CHEMICAL CALCULATIONS THIN FILMS TIN (II) SULFIDE |
URI: | http://elar.urfu.ru/handle/10995/131108 |
Access: | info:eu-repo/semantics/openAccess |
RSCI ID: | 57597733 |
SCOPUS ID: | 85181744076 |
WOS ID: | 001137162800011 |
PURE ID: | 51617462 |
ISSN: | 2220-8054 |
DOI: | 10.17586/2220-8054-2023-14-6-699-704 |
metadata.dc.description.sponsorship: | Ministry of Education and Science of the Russian Federation, Minobrnauka; Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences, ISSC UB RAS PACS 81.10.Dn, 82.60.Lf, 82.70.Dd, 81.05.Hd ABSTRACT Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. KEYWORDS tin(II) sulfide, thin films, chemical bath deposition, p-type conductivity, quantum-chemical calculations, formation mechanism ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation). FOR CITATION Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F. Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Phys. Chem. Math., 2023, 14 (6), 699–704. |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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