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dc.contributor.authorKozhevnikova, N. S.en
dc.contributor.authorMaskaeva, L. N.en
dc.contributor.authorEnyashin, A. N.en
dc.contributor.authorTyutyunnik, A. P.en
dc.contributor.authorLipina, O. A.en
dc.contributor.authorSelyanin, I. O.en
dc.contributor.authorMarkov, V. F.en
dc.date.accessioned2024-04-05T16:38:54Z-
dc.date.available2024-04-05T16:38:54Z-
dc.date.issued2023-
dc.identifier.citationKozhevnikova, N, Maskaeva, L, Enyashin, A, Tyutyunnik, A, Lipina, O, Selyanin, I & Markov, VF 2023, 'Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films', Nanosystems: Physics, Chemistry, Mathematics, Том. 14, № 6, стр. 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704harvard_pure
dc.identifier.citationKozhevnikova, N., Maskaeva, L., Enyashin, A., Tyutyunnik, A., Lipina, O., Selyanin, I., & Markov, V. F. (2023). Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Physics, Chemistry, Mathematics, 14(6), 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704apa_pure
dc.identifier.issn2220-8054-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85181744076&doi=10.17586%2f2220-8054-2023-14-6-699-704&partnerID=40&md5=5f61277535aed17d2ac76637b74afb521
dc.identifier.otherhttp://nanojournal.ifmo.ru/en/wp-content/uploads/2023/12/NPCM146P699-704.pdfpdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/131108-
dc.description.abstractPhotosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023.en
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka; Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences, ISSC UB RASen
dc.description.sponsorshipPACS 81.10.Dn, 82.60.Lf, 82.70.Dd, 81.05.Hd ABSTRACT Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. KEYWORDS tin(II) sulfide, thin films, chemical bath deposition, p-type conductivity, quantum-chemical calculations, formation mechanism ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation). FOR CITATION Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F. Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Phys. Chem. Math., 2023, 14 (6), 699–704.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherITMO Universityen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceNanosystems: Physics, Chemistry, Mathematics2
dc.sourceNanosystems: Physics, Chemistry, Mathematicsen
dc.subjectCHEMICAL BATH DEPOSITIONen
dc.subjectFORMATION MECHANISMen
dc.subjectP-TYPE CONDUCTIVITYen
dc.subjectQUANTUM-CHEMICAL CALCULATIONSen
dc.subjectTHIN FILMSen
dc.subjectTIN (II) SULFIDEen
dc.titleSurface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin filmsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.type|info:eu-repo/semantics/publishedVersionen
dc.identifier.rsi57597733-
dc.identifier.doi10.17586/2220-8054-2023-14-6-699-704-
dc.identifier.scopus85181744076-
local.contributor.employeeKozhevnikova, N.S., Institute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.employeeMaskaeva, L.N., Ural Federal University, Ekaterinburg, Russian Federationen
local.contributor.employeeEnyashin, A.N., Institute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.employeeTyutyunnik, A.P., Institute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.employeeLipina, O.A., Institute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.employeeSelyanin, I.O., Institute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.employeeMarkov, V.F., Ural Federal University, Ekaterinburg, Russian Federationen
local.description.firstpage699-
local.description.lastpage704-
local.issue6-
local.volume14-
dc.identifier.wos001137162800011-
local.contributor.departmentInstitute of Solid-State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russian Federationen
local.contributor.departmentUral Federal University, Ekaterinburg, Russian Federationen
local.identifier.pure51617462-
local.identifier.eid2-s2.0-85181744076-
local.identifier.wosWOS:001137162800011-
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