Dielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics

Esin, A. A.; Alikin, D. O.; Turygin, A. P.; Abramov, A. S.; Hreščak, J.; Walker, J.; Rojac, T.; Bencan, A.; Malic, B.; Kholkin, A. L.; Shur, V. Ya.; Шур, В. Я.

doi:10.1063/1.4975341

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/111933

Title:	Dielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics
Authors:	Esin, A. A. Alikin, D. O. Turygin, A. P. Abramov, A. S. Hreščak, J. Walker, J. Rojac, T. Bencan, A. Malic, B. Kholkin, A. L. Shur, V. Ya. Шур, В. Я.
Issue Date:	2017
Publisher:	American Institute of Physics Inc. AIP Publishing
Citation:	Dielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics / A. A. Esin, D. O. Alikin, A. P. Turygin et al. // Journal of Applied Physics. — 2017. — Vol. 121. — Iss. 7. — 074101.
Abstract:	The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such “extrinsic” contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials. © 2017 Author(s).
Keywords:	CERAMIC MATERIALS DIELECTRIC RELAXATION ELECTRIC FIELDS FERROELECTRIC CERAMICS FERROELECTRIC MATERIALS FERROELECTRICITY NIOBIUM OXIDE PERMITTIVITY SODIUM CHARGED DOMAIN WALL DIELECTRIC PERMITTIVITIES DOMAIN WALL DENSITY DOMAIN WALL DISPLACEMENT EFFECTIVE DIELECTRIC RESPONSE EXTERNAL ELECTRIC FIELD MACROSCOPIC PROPERTIES MAXWELL-WAGNER-SILLARS DOMAIN WALLS
URI:	http://elar.urfu.ru/handle/10995/111933
Access:	info:eu-repo/semantics/openAccess
SCOPUS ID:	85013296224
WOS ID:	000395283700010
PURE ID:	1615458
ISSN:	0021-8979
DOI:	10.1063/1.4975341
metadata.dc.description.sponsorship:	The equipment of the Ural Center for Shared Use "Modern Nanotechnology" UrFU has been used. The research was made possible by the Ministry of Education and Science of Russian Federation (UID RFMEFI58715X0022). The authors acknowledge E. L. Rumyantsev and M. Morozov for useful discussion.
Appears in Collections:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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