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dc.contributor.authorEsin, A. A.en
dc.contributor.authorAlikin, D. O.en
dc.contributor.authorTurygin, A. P.en
dc.contributor.authorAbramov, A. S.en
dc.contributor.authorHreščak, J.en
dc.contributor.authorWalker, J.en
dc.contributor.authorRojac, T.en
dc.contributor.authorBencan, A.en
dc.contributor.authorMalic, B.en
dc.contributor.authorKholkin, A. L.en
dc.contributor.authorShur, V. Ya.en
dc.contributor.authorШур, В. Я.ru
dc.date.accessioned2022-05-12T08:26:00Z-
dc.date.available2022-05-12T08:26:00Z-
dc.date.issued2017-
dc.identifier.citationDielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics / A. A. Esin, D. O. Alikin, A. P. Turygin et al. // Journal of Applied Physics. — 2017. — Vol. 121. — Iss. 7. — 074101.en
dc.identifier.issn0021-8979-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111933-
dc.description.abstractThe influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such “extrinsic” contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials. © 2017 Author(s).en
dc.description.sponsorshipThe equipment of the Ural Center for Shared Use "Modern Nanotechnology" UrFU has been used. The research was made possible by the Ministry of Education and Science of Russian Federation (UID RFMEFI58715X0022). The authors acknowledge E. L. Rumyantsev and M. Morozov for useful discussion.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en1
dc.publisherAIP Publishingen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ Appl Phys2
dc.sourceJournal of Applied Physicsen
dc.subjectCERAMIC MATERIALSen
dc.subjectDIELECTRIC RELAXATIONen
dc.subjectELECTRIC FIELDSen
dc.subjectFERROELECTRIC CERAMICSen
dc.subjectFERROELECTRIC MATERIALSen
dc.subjectFERROELECTRICITYen
dc.subjectNIOBIUM OXIDEen
dc.subjectPERMITTIVITYen
dc.subjectSODIUMen
dc.subjectCHARGED DOMAIN WALLen
dc.subjectDIELECTRIC PERMITTIVITIESen
dc.subjectDOMAIN WALL DENSITYen
dc.subjectDOMAIN WALL DISPLACEMENTen
dc.subjectEFFECTIVE DIELECTRIC RESPONSEen
dc.subjectEXTERNAL ELECTRIC FIELDen
dc.subjectMACROSCOPIC PROPERTIESen
dc.subjectMAXWELL-WAGNER-SILLARSen
dc.subjectDOMAIN WALLSen
dc.titleDielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramicsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1063/1.4975341-
dc.identifier.scopus85013296224-
local.contributor.employeeEsin, A.A., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Alikin, D.O., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Turygin, A.P., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Abramov, A.S., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Hreščak, J., Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, 1000, Slovenia; Walker, J., Materials Research Institute, Pennsylvania State University, University Park, PA 16802, United States; Rojac, T., Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, 1000, Slovenia; Bencan, A., Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, 1000, Slovenia; Malic, B., Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, 1000, Slovenia; Kholkin, A.L., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation, Physics Department, CICECO-Aveiro Institute of Materials, University of Aveiro, Aveiro, 3810-193, Portugal; Shur, V.Ya., Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federationen
local.issue7-
local.volume121-
dc.identifier.wos000395283700010-
local.contributor.departmentInstitute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, 1000, Slovenia; Materials Research Institute, Pennsylvania State University, University Park, PA 16802, United States; Physics Department, CICECO-Aveiro Institute of Materials, University of Aveiro, Aveiro, 3810-193, Portugalen
local.identifier.pure1615458-
local.description.order074101-
local.identifier.eid2-s2.0-85013296224-
local.identifier.wosWOS:000395283700010-
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