Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111933
Title: Dielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics
Authors: Esin, A. A.
Alikin, D. O.
Turygin, A. P.
Abramov, A. S.
Hreščak, J.
Walker, J.
Rojac, T.
Bencan, A.
Malic, B.
Kholkin, A. L.
Shur, V. Ya.
Issue Date: 2017
Publisher: American Institute of Physics Inc.
AIP Publishing
Citation: Dielectric Relaxation and Charged Domain Walls in (K,Na)NbO3-Based Ferroelectric Ceramics / A. A. Esin, D. O. Alikin, A. P. Turygin et al. // Journal of Applied Physics. — 2017. — Vol. 121. — Iss. 7. — 074101.
Abstract: The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such “extrinsic” contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials. © 2017 Author(s).
Keywords: CERAMIC MATERIALS
DIELECTRIC RELAXATION
ELECTRIC FIELDS
FERROELECTRIC CERAMICS
FERROELECTRIC MATERIALS
FERROELECTRICITY
NIOBIUM OXIDE
PERMITTIVITY
SODIUM
CHARGED DOMAIN WALL
DIELECTRIC PERMITTIVITIES
DOMAIN WALL DENSITY
DOMAIN WALL DISPLACEMENT
EFFECTIVE DIELECTRIC RESPONSE
EXTERNAL ELECTRIC FIELD
MACROSCOPIC PROPERTIES
MAXWELL-WAGNER-SILLARS
DOMAIN WALLS
URI: http://hdl.handle.net/10995/111933
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85013296224
PURE ID: 1615458
ISSN: 0021-8979
metadata.dc.description.sponsorship: The equipment of the Ural Center for Shared Use "Modern Nanotechnology" UrFU has been used. The research was made possible by the Ministry of Education and Science of Russian Federation (UID RFMEFI58715X0022). The authors acknowledge E. L. Rumyantsev and M. Morozov for useful discussion.
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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