ISSN: 2310-757X
Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/111508| Title: | Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures |
| Authors: | Minkov, G. M. Germanenko, A. V. Rut, O. E. Sherstobitov, A. A. Zvonkov, B. N. Uskova, E. A. Birukov, A. A. |
| Issue Date: | 2001 |
| Publisher: | American Physical Society (APS) |
| Citation: | Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2001. — Vol. 64. — Iss. 19. — P. 1933091-1933094. — 193309. |
| Abstract: | The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature. |
| Keywords: | ARTICLE CONDUCTANCE ELECTRIC POTENTIAL ELECTRON ENERGY LOW TEMPERATURE MAGNETISM QUANTUM MECHANICS TEMPERATURE DEPENDENCE |
| URI: | http://elar.urfu.ru/handle/10995/111508 |
| Access: | info:eu-repo/semantics/openAccess |
| SCOPUS ID: | 0001044660 |
| WOS ID: | 000172307900014 |
| PURE ID: | 8628754 |
| ISSN: | 0163-1829 |
| Sponsorship: | This work was supported in part by the RFBR through Grant Nos. 00-02-16215, 01-02-06471, and 01-02-17003, the Program University of Russia through Grant Nos. 990409 and 990425, the CRDF through Grant No. REC-005, and the Russian Program Physics of Solid State Nanostructures. |
| Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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