1. Электронный научный архив УрФУ
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  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorGermanenko, A. V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorZvonkov, B. N.en
dc.contributor.authorUskova, E. A.en
dc.contributor.authorBirukov, A. A.en
dc.date.accessioned2022-05-12T08:18:31Z-
dc.date.available2022-05-12T08:18:31Z-
dc.date.issued2001-
dc.identifier.citationRole of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2001. — Vol. 64. — Iss. 19. — P. 1933091-1933094. — 193309.en
dc.identifier.issn0163-1829-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111508-
dc.description.abstractThe temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.en
dc.description.sponsorshipThis work was supported in part by the RFBR through Grant Nos. 00-02-16215, 01-02-06471, and 01-02-17003, the Program University of Russia through Grant Nos. 990409 and 990425, the CRDF through Grant No. REC-005, and the Russian Program Physics of Solid State Nanostructures.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.subjectARTICLEen
dc.subjectCONDUCTANCEen
dc.subjectELECTRIC POTENTIALen
dc.subjectELECTRONen
dc.subjectENERGYen
dc.subjectLOW TEMPERATUREen
dc.subjectMAGNETISMen
dc.subjectQUANTUM MECHANICSen
dc.subjectTEMPERATURE DEPENDENCEen
dc.titleRole of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structuresen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.scopus0001044660-
local.contributor.employeeMinkov, G.M., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Germanenko, A.V., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Rut, O.E., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Sherstobitov, A.A., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Zvonkov, B.N., Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federation; Uskova, E.A., Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federation; Birukov, A.A., Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.description.firstpage1933091-
local.description.lastpage1933094-
local.issue19-
local.volume64-
dc.identifier.wos000172307900014-
local.contributor.departmentInstitute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.identifier.pure8628754-
local.description.order193309-
local.identifier.eid2-s2.0-0001044660-
local.fund.rffi00-02-16215-
local.fund.rffi01-02-06471-
local.fund.rffi01-02-17003-
local.identifier.wosWOS:000172307900014-
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