Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111508
Title: Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures
Authors: Minkov, G. M.
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Zvonkov, B. N.
Uskova, E. A.
Birukov, A. A.
Issue Date: 2001
Publisher: American Physical Society (APS)
Citation: Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2001. — Vol. 64. — Iss. 19. — P. 1933091-1933094. — 193309.
Abstract: The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.
Keywords: ARTICLE
CONDUCTANCE
ELECTRIC POTENTIAL
ELECTRON
ENERGY
LOW TEMPERATURE
MAGNETISM
QUANTUM MECHANICS
TEMPERATURE DEPENDENCE
URI: http://hdl.handle.net/10995/111508
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 0001044660
ISSN: 0163-1829
metadata.dc.description.sponsorship: This work was supported in part by the RFBR through Grant Nos. 00-02-16215, 01-02-06471, and 01-02-17003, the Program University of Russia through Grant Nos. 990409 and 990425, the CRDF through Grant No. REC-005, and the Russian Program Physics of Solid State Nanostructures.
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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