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|Title:||Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures|
|Authors:||Minkov, G. M.|
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Zvonkov, B. N.
Uskova, E. A.
Birukov, A. A.
|Publisher:||American Physical Society (APS)|
|Citation:||Role of Doped Layers in the Dephasing of Two-dimensional Electrons in Quantum-well Structures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2001. — Vol. 64. — Iss. 19. — P. 1933091-1933094. — 193309.|
|Abstract:||The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.|
|metadata.dc.description.sponsorship:||This work was supported in part by the RFBR through Grant Nos. 00-02-16215, 01-02-06471, and 01-02-17003, the Program University of Russia through Grant Nos. 990409 and 990425, the CRDF through Grant No. REC-005, and the Russian Program Physics of Solid State Nanostructures.|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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