Inter-Layer Coupling Induced Bandgap Reduction in Ultrathin MoS2

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/104148

Title:	Inter-Layer Coupling Induced Bandgap Reduction in Ultrathin MoS2
Authors:	Putilov, A. V. Trainer, D. J. Giorgio, C. Di. Saari, T. Wang, B. Wolak, M. Chandrasena, R. U. Lane, C. Chang, T.-R. Jeng, H.-T. Lin, H. Kronast, F. Gray, A. X. Xi, X. X. Nieminen, J. Bansil, A. Iavarone, A.
Issue Date:	2017
Publisher:	Ural Federal University
Citation:	Inter-Layer Coupling Induced Bandgap Reduction in Ultrathin MoS2 / A. V. Putilov, D. J. Trainer, C. Di. Giorgio et al. // Scanning Probe Microscopy. Abstract Book of International Conference (Ekaterinburg, August 27-30, 2017). — Ekaterinburg, Ural Federal University, 2017. — 71 p.
Abstract:	We report on a study of highly crystalline islands of MoS2 grown on HOPG substrate. Using STM/STS we find that the valence band edge shifts as a function of the layer number. Numerical calculations reveal the mechanism underlying the bandgap reduction and the role of the interfacial Sulfur atoms is clarified.
URI:	http://elar.urfu.ru/handle/10995/104148
Conference name:	International Conference "Scanning Probe Microscopy" ; International Youth Conference "Application of Scanning Probe Microscopy in Scientific Research"
Conference date:	27.08.2017-30.08.2017
ISBN:	978-5-9500624-0-7
Origin:	International Conference "Scanning Probe Microscopy" ; International Youth Conference "Application of Scanning Probe Microscopy in Scientific Research". — Ekaterinburg, 2017
Appears in Collections:	Scanning Probe Microscopy

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