Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/103299
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dc.contributor.authorManjunath, V.en
dc.contributor.authorSowmya, D. V.en
dc.contributor.authorAchari, K. M. M.en
dc.contributor.authorSandhya, P.en
dc.contributor.authorSravya, G.en
dc.contributor.authorAnanda, P.en
dc.contributor.authorKrishnaiah, M.en
dc.date.accessioned2021-08-31T15:08:53Z-
dc.date.available2021-08-31T15:08:53Z-
dc.date.issued2020-
dc.identifier.citationStructural, morphological and 1/f noise properties of ITO/TiO2thin films by e-beam evaporation system for optoelectronic device applications / V. Manjunath, D. V. Sowmya, K. M. M. Achari, et al. — DOI 10.1063/5.0018120 // AIP Conference Proceedings. — 2020. — Vol. 2280. — 0018120.en
dc.identifier.isbn9780735440104-
dc.identifier.issn0094243X-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85096445630&doi=10.1063%2f5.0018120&partnerID=40&md5=83fddc13f7d476ad48c989633acb1c39
dc.identifier.otherhttps://elar.urfu.ru/bitstream/10995/81131/1/978-5-6044427-0-8_2019_091.pdfm
dc.identifier.urihttp://hdl.handle.net/10995/103299-
dc.description.abstractIn the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (93%) was obtained with 450 °C annealed ITO/TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications. © 2020 Author(s).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceAIP Conf. Proc.2
dc.sourceAIP Conference Proceedingsen
dc.titleStructural, morphological and 1/f noise properties of ITO/TiO2thin films by e-beam evaporation system for optoelectronic device applicationsen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1063/5.0018120-
dc.identifier.scopus85096445630-
local.contributor.employeeManjunath, V., Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.employeeSowmya, D.V., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.employeeAchari, K.M.M., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.employeeSandhya, P., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.employeeSravya, G., Chemical Engineering Institute, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeAnanda, P., Department of Physics, Madanapalle Institute of Technology and Science A.P.517325, India
local.contributor.employeeKrishnaiah, M., Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.volume2280-
local.contributor.departmentDepartment of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.departmentDepartment of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India
local.contributor.departmentChemical Engineering Institute, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentDepartment of Physics, Madanapalle Institute of Technology and Science A.P.517325, India
local.identifier.pure20131796-
local.identifier.pure205796ba-151e-4aae-973b-80bf4bb7187buuid
local.description.order0018120-
local.identifier.eid2-s2.0-85096445630-
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