Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс:
http://elar.urfu.ru/handle/10995/103299
Полная запись метаданных
Поле DC | Значение | Язык |
---|---|---|
dc.contributor.author | Manjunath, V. | en |
dc.contributor.author | Sowmya, D. V. | en |
dc.contributor.author | Achari, K. M. M. | en |
dc.contributor.author | Sandhya, P. | en |
dc.contributor.author | Sravya, G. | en |
dc.contributor.author | Ananda, P. | en |
dc.contributor.author | Krishnaiah, M. | en |
dc.date.accessioned | 2021-08-31T15:08:53Z | - |
dc.date.available | 2021-08-31T15:08:53Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Structural, morphological and 1/f noise properties of ITO/TiO2thin films by e-beam evaporation system for optoelectronic device applications / V. Manjunath, D. V. Sowmya, K. M. M. Achari, et al. — DOI 10.1063/5.0018120 // AIP Conference Proceedings. — 2020. — Vol. 2280. — 0018120. | en |
dc.identifier.isbn | 9780735440104 | - |
dc.identifier.issn | 0094243X | - |
dc.identifier.other | Final | 2 |
dc.identifier.other | All Open Access, Bronze, Green | 3 |
dc.identifier.other | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096445630&doi=10.1063%2f5.0018120&partnerID=40&md5=83fddc13f7d476ad48c989633acb1c39 | |
dc.identifier.other | https://elar.urfu.ru/bitstream/10995/81131/1/978-5-6044427-0-8_2019_091.pdf | m |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/103299 | - |
dc.description.abstract | In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (93%) was obtained with 450 °C annealed ITO/TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications. © 2020 Author(s). | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics Inc. | en |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.source | AIP Conf. Proc. | 2 |
dc.source | AIP Conference Proceedings | en |
dc.title | Structural, morphological and 1/f noise properties of ITO/TiO2thin films by e-beam evaporation system for optoelectronic device applications | en |
dc.type | Conference Paper | en |
dc.type | info:eu-repo/semantics/conferenceObject | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.identifier.doi | 10.1063/5.0018120 | - |
dc.identifier.scopus | 85096445630 | - |
local.contributor.employee | Manjunath, V., Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.employee | Sowmya, D.V., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.employee | Achari, K.M.M., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.employee | Sandhya, P., Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.employee | Sravya, G., Chemical Engineering Institute, Ural Federal University, Yekaterinburg, 620002, Russian Federation | |
local.contributor.employee | Ananda, P., Department of Physics, Madanapalle Institute of Technology and Science A.P.517325, India | |
local.contributor.employee | Krishnaiah, M., Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.volume | 2280 | - |
dc.identifier.wos | 000598468000027 | - |
local.contributor.department | Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.department | Department of Chemistry, Sri Padmavati Mahila Visvavidyalayam, Women's University, Tirupati, A.P, 517502, India | |
local.contributor.department | Chemical Engineering Institute, Ural Federal University, Yekaterinburg, 620002, Russian Federation | |
local.contributor.department | Department of Physics, Madanapalle Institute of Technology and Science A.P.517325, India | |
local.identifier.pure | 205796ba-151e-4aae-973b-80bf4bb7187b | uuid |
local.identifier.pure | 20131796 | - |
local.description.order | 0018120 | - |
local.identifier.eid | 2-s2.0-85096445630 | - |
local.identifier.wos | WOS:000598468000027 | - |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
Файлы этого ресурса:
Файл | Описание | Размер | Формат | |
---|---|---|---|---|
2-s2.0-85096445630.pdf | 710,3 kB | Adobe PDF | Просмотреть/Открыть |
Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.