Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102433
Title: Ferroelectric domain triggers the charge modulation in semiconductors (invited)
Authors: Morozovska, A. N.
Eliseev, E. A.
Ievlev, A. V.
Varenyk, O. V.
Pusenkova, A. S.
Chu, Y. -H.
Shur, V. Y.
Strikha, M. V.
Kalinin, S. V.
Шур, В. Я.
Issue Date: 2014
Publisher: American Institute of Physics Inc.
Citation: Ferroelectric domain triggers the charge modulation in semiconductors (invited) / A. N. Morozovska, E. A. Eliseev, A. V. Ievlev, et al. — DOI 10.1063/1.4891310 // Journal of Applied Physics. — 2014. — Vol. 116. — Iss. 6. — 066817.
Abstract: We consider a typical heterostructure "domain patterned ferroelectric film - ultra-thin dielectric layer - semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. © 2014 AIP Publishing LLC.
Keywords: FERROELECTRIC FILMS
FERROELECTRIC MATERIALS
MODULATION
AMBIENT ATMOSPHERE
ANALYTICAL RESULTS
CHARGE MODULATION
FERROELECTRIC DOMAINS
FERROELECTRIC SURFACES
MULTI-LAYERED GRAPHENE
SEMICONDUCTOR LAYERS
SPONTANEOUS POLARIZATIONS
FERROELECTRICITY
URI: http://hdl.handle.net/10995/102433
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84906309082
PURE ID: 412790
a269de16-2260-45a9-bae8-cf11f05225ee
ISSN: 218979
DOI: 10.1063/1.4891310
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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