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Название: Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies
Авторы: Zatsepin, D. A.
Boukhvalov, D. W.
Kurmaev, E. Z.
Zatsepin, A. F.
Kim, S. S.
Gavrilov, N. V.
Zhidkov, I. S.
Дата публикации: 2017
Издатель: Elsevier Masson SAS
Библиографическое описание: Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies / D. A. Zatsepin, D. W. Boukhvalov, E. Z. Kurmaev, et al. — DOI 10.1016/j.solidstatesciences.2017.07.013 // Solid State Sciences. — 2017. — Vol. 71. — P. 130-138.
Аннотация: The over threshold carbon-loadings (∼50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (∼7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 h vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS-and-DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-TiO2:[Cu+][Cu2+] for the bulk and Cx-TiO2:[Cu+][Cu0] for thin-films. It was demonstrated the in the mode of heavy carbon-loadings the remaining majority of neutral C–C bonds (sp3-type) is dominating and only a lack of embedded carbon is fabricating the O–C[dbnd]O clusters. No valence base-band width altering was established after sequential carbon-copper modification of the atomic structure of initial TiO2-hosts except the dominating majority of Cu 3s states after Cu-sensitization. The crucial role of neutral carbon low-dimensional impurities as the precursors for the new phases growth was shown for Cu-sensitized Cx-TiO2 intermediate-state hosts. © 2017 Elsevier Masson SAS
Ключевые слова: OXYGEN VACANCIES
X RAY PHOTOELECTRON SPECTROSCOPY
CARBON LOADINGS
CU IMPURITY
DFT CALCULATION
IDLE CYCLES
IMPLANTATION TECHNIQUE
INTERMEDIATE STATE
LOW DIMENSIONAL
SEQUENTIAL MODE
COPPER
URI: http://elar.urfu.ru/handle/10995/102101
Условия доступа: info:eu-repo/semantics/openAccess
Идентификатор SCOPUS: 85025690289
Идентификатор WOS: 000407784400018
Идентификатор PURE: 18ba2a12-7e19-49e9-936f-9a31dca1baa3
1971270
ISSN: 12932558
DOI: 10.1016/j.solidstatesciences.2017.07.013
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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