Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101828
Title: Charge puddles in germanene
Authors: Yao, Q.
Jiao, Z.
Bampoulis, P.
Zhang, L.
Rudenko, A. N.
Katsnelson, M. I.
Zandvliet, H. J. W.
Issue Date: 2019
Publisher: American Institute of Physics Inc.
Citation: Charge puddles in germanene / Q. Yao, Z. Jiao, P. Bampoulis, et al. — DOI 10.1063/1.5085304 // Applied Physics Letters. — 2019. — Vol. 114. — Iss. 4. — 041601.
Abstract: We report an investigation of the electronic inhomogeneities in a single germanene layer grown on a molybdenum disulfide (MoS 2 ) substrate. Using scanning tunneling microscopy and spectroscopy, we have recorded spatial maps of the Dirac point of germanene. The Dirac point maps reveal the presence of charge puddles in the germanene sheet. The Dirac point varies from -30 meV to +15 meV, corresponding to a charge density in the puddles in the range of 2.6 × 10 -3 electrons to 6.6 × 10 -4 holes per nm 2 . The radius of these puddles is about 10-20 nm, resulting in a total charge of the order of one charge carrier per puddle. The defect concentration in the top layer of the MoS 2 substrate is very comparable to the density of charge puddles, suggesting that the charge puddles are caused by the charged defects in the top layer of the MoS 2 substrate. © 2019 Author(s).
Keywords: DEFECTS
LAYERED SEMICONDUCTORS
MOLYBDENUM COMPOUNDS
SCANNING TUNNELING MICROSCOPY
SUBSTRATES
CHARGED DEFECTS
DEFECT CONCENTRATIONS
DENSITY OF CHARGES
INHOMOGENEITIES
MOLYBDENUM DISULFIDE
SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY
SPATIAL MAPS
TOTAL CHARGE
SULFUR COMPOUNDS
URI: http://hdl.handle.net/10995/101828
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85060791998
PURE ID: 8863144
76f89725-f08a-4a65-9da7-5f1ec526c7b2
ISSN: 36951
DOI: 10.1063/1.5085304
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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