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dc.contributor.authorYao, Q.en
dc.contributor.authorJiao, Z.en
dc.contributor.authorBampoulis, P.en
dc.contributor.authorZhang, L.en
dc.contributor.authorRudenko, A. N.en
dc.contributor.authorKatsnelson, M. I.en
dc.contributor.authorZandvliet, H. J. W.en
dc.date.accessioned2021-08-31T15:00:07Z-
dc.date.available2021-08-31T15:00:07Z-
dc.date.issued2019-
dc.identifier.citationCharge puddles in germanene / Q. Yao, Z. Jiao, P. Bampoulis, et al. — DOI 10.1063/1.5085304 // Applied Physics Letters. — 2019. — Vol. 114. — Iss. 4. — 041601.en
dc.identifier.issn36951-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85060791998&doi=10.1063%2f1.5085304&partnerID=40&md5=62bce3cf54b84be4e7dc464b9fd190bb
dc.identifier.otherhttps://repository.ubn.ru.nl/bitstream/2066/201317/1/201317.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101828-
dc.description.abstractWe report an investigation of the electronic inhomogeneities in a single germanene layer grown on a molybdenum disulfide (MoS 2 ) substrate. Using scanning tunneling microscopy and spectroscopy, we have recorded spatial maps of the Dirac point of germanene. The Dirac point maps reveal the presence of charge puddles in the germanene sheet. The Dirac point varies from -30 meV to +15 meV, corresponding to a charge density in the puddles in the range of 2.6 × 10 -3 electrons to 6.6 × 10 -4 holes per nm 2 . The radius of these puddles is about 10-20 nm, resulting in a total charge of the order of one charge carrier per puddle. The defect concentration in the top layer of the MoS 2 substrate is very comparable to the density of charge puddles, suggesting that the charge puddles are caused by the charged defects in the top layer of the MoS 2 substrate. © 2019 Author(s).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceAppl Phys Lett2
dc.sourceApplied Physics Lettersen
dc.subjectDEFECTSen
dc.subjectLAYERED SEMICONDUCTORSen
dc.subjectMOLYBDENUM COMPOUNDSen
dc.subjectSCANNING TUNNELING MICROSCOPYen
dc.subjectSUBSTRATESen
dc.subjectCHARGED DEFECTSen
dc.subjectDEFECT CONCENTRATIONSen
dc.subjectDENSITY OF CHARGESen
dc.subjectINHOMOGENEITIESen
dc.subjectMOLYBDENUM DISULFIDEen
dc.subjectSCANNING TUNNELING MICROSCOPY AND SPECTROSCOPYen
dc.subjectSPATIAL MAPSen
dc.subjectTOTAL CHARGEen
dc.subjectSULFUR COMPOUNDSen
dc.titleCharge puddles in germaneneen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1063/1.5085304-
dc.identifier.scopus85060791998-
local.contributor.employeeYao, Q., Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
local.contributor.employeeJiao, Z., Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
local.contributor.employeeBampoulis, P., Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
local.contributor.employeeZhang, L., Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
local.contributor.employeeRudenko, A.N., School of Physics and Technology, Wuhan University, Wuhan, 430072, China, Radboud University, Institute for Molecules and Materials, Heijendaalseweg 135, Nijmegen, 6525 AJ, Netherlands, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Str. 19, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeKatsnelson, M.I., Radboud University, Institute for Molecules and Materials, Heijendaalseweg 135, Nijmegen, 6525 AJ, Netherlands, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Str. 19, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeZandvliet, H.J.W., Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
local.issue4-
local.volume114-
local.contributor.departmentPhysics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
local.contributor.departmentHunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
local.contributor.departmentSchool of Physics and Technology, Wuhan University, Wuhan, 430072, China
local.contributor.departmentRadboud University, Institute for Molecules and Materials, Heijendaalseweg 135, Nijmegen, 6525 AJ, Netherlands
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Str. 19, Ekaterinburg, 620002, Russian Federation
local.identifier.pure8863144-
local.identifier.pure76f89725-f08a-4a65-9da7-5f1ec526c7b2uuid
local.description.order041601-
local.identifier.eid2-s2.0-85060791998-
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