Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/101698
Title: Atomically thin oxide layer on the elemental superconductor Ta(001) surface
Authors: Mozara, R.
Kamlapure, A.
Valentyuk, M.
Cornils, L.
Lichtenstein, A. I.
Wiebe, J.
Wiesendanger, R.
Issue Date: 2019
Publisher: American Physical Society
Citation: Atomically thin oxide layer on the elemental superconductor Ta(001) surface / R. Mozara, A. Kamlapure, M. Valentyuk, et al. — DOI 10.1103/PhysRevMaterials.3.094801 // Physical Review Materials. — 2019. — Vol. 3. — Iss. 9. — 094801.
Abstract: Recently, the oxygen-reconstructed tantalum surface Ta(001)-p(3×3)-O has experienced considerable attention due its use as a potential platform for studying spin chains on superconductors. Experimental studies using scanning tunneling microscopy and spectroscopy found rich atomic and electronic structures already for the clean Ta(001)-O surface, which we combine here with ab initio methods. We found a significant reconstruction of the surface into a 2D polymorph oxide with two distinct patterns of 1-nm scale. One of the patterns represents an unusual defect structural state. This state appears only in the simulations with the effective presence of oxygen vacancies, which we also discuss in the context of the oxide formation. A specific combination of structural and electronic properties was established behind the diverse shapes detected in topographic maps. We also observed the energy-dependent partial-charge localization effect under applied bias voltages, which includes a contrast reversal. These effects originate solely in miscellaneous ionic and metallic properties of the electronic system. The charge distribution and polarization properties of this atomically thin oxide layer is shown to vary significantly between normal and defective superstructures, possibly contributing to the rich phenomena related to topological superconductivity recently discussed for Fe adsorbates. © 2019 American Physical Society.
Keywords: ELECTRONIC PROPERTIES
ELECTRONIC STRUCTURE
MAPS
SCANNING TUNNELING MICROSCOPY
AB INITIO METHOD
APPLIED BIAS VOLTAGE
ELECTRONIC SYSTEMS
METALLIC PROPERTIES
POLARIZATION PROPERTIES
SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY
STRUCTURAL AND ELECTRONIC PROPERTIES
THIN OXIDE LAYERS
SUPERCONDUCTING MATERIALS
URI: http://elar.urfu.ru/handle/10995/101698
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85072974023
WOS ID: 000488277000003
PURE ID: 1530e5ee-3ea9-4b37-a874-3e0f6e14997e
11116327
ISSN: 24759953
DOI: 10.1103/PhysRevMaterials.3.094801
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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