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dc.contributor.authorMozara, R.en
dc.contributor.authorKamlapure, A.en
dc.contributor.authorValentyuk, M.en
dc.contributor.authorCornils, L.en
dc.contributor.authorLichtenstein, A. I.en
dc.contributor.authorWiebe, J.en
dc.contributor.authorWiesendanger, R.en
dc.date.accessioned2021-08-31T14:59:06Z-
dc.date.available2021-08-31T14:59:06Z-
dc.date.issued2019-
dc.identifier.citationAtomically thin oxide layer on the elemental superconductor Ta(001) surface / R. Mozara, A. Kamlapure, M. Valentyuk, et al. — DOI 10.1103/PhysRevMaterials.3.094801 // Physical Review Materials. — 2019. — Vol. 3. — Iss. 9. — 094801.en
dc.identifier.issn24759953-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85072974023&doi=10.1103%2fPhysRevMaterials.3.094801&partnerID=40&md5=32881e06501f5d2782550d760a4d467e
dc.identifier.otherhttp://arxiv.org/pdf/1812.03141m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101698-
dc.description.abstractRecently, the oxygen-reconstructed tantalum surface Ta(001)-p(3×3)-O has experienced considerable attention due its use as a potential platform for studying spin chains on superconductors. Experimental studies using scanning tunneling microscopy and spectroscopy found rich atomic and electronic structures already for the clean Ta(001)-O surface, which we combine here with ab initio methods. We found a significant reconstruction of the surface into a 2D polymorph oxide with two distinct patterns of 1-nm scale. One of the patterns represents an unusual defect structural state. This state appears only in the simulations with the effective presence of oxygen vacancies, which we also discuss in the context of the oxide formation. A specific combination of structural and electronic properties was established behind the diverse shapes detected in topographic maps. We also observed the energy-dependent partial-charge localization effect under applied bias voltages, which includes a contrast reversal. These effects originate solely in miscellaneous ionic and metallic properties of the electronic system. The charge distribution and polarization properties of this atomically thin oxide layer is shown to vary significantly between normal and defective superstructures, possibly contributing to the rich phenomena related to topological superconductivity recently discussed for Fe adsorbates. © 2019 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhysic. Rev. Mat.2
dc.sourcePhysical Review Materialsen
dc.subjectELECTRONIC PROPERTIESen
dc.subjectELECTRONIC STRUCTUREen
dc.subjectMAPSen
dc.subjectSCANNING TUNNELING MICROSCOPYen
dc.subjectAB INITIO METHODen
dc.subjectAPPLIED BIAS VOLTAGEen
dc.subjectELECTRONIC SYSTEMSen
dc.subjectMETALLIC PROPERTIESen
dc.subjectPOLARIZATION PROPERTIESen
dc.subjectSCANNING TUNNELING MICROSCOPY AND SPECTROSCOPYen
dc.subjectSTRUCTURAL AND ELECTRONIC PROPERTIESen
dc.subjectTHIN OXIDE LAYERSen
dc.subjectSUPERCONDUCTING MATERIALSen
dc.titleAtomically thin oxide layer on the elemental superconductor Ta(001) surfaceen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevMaterials.3.094801-
dc.identifier.scopus85072974023-
local.contributor.employeeMozara, R., I. Institute of Theoretical Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.employeeKamlapure, A., Institute for Nanostructure and Solid State Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.employeeValentyuk, M., I. Institute of Theoretical Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany, Department of Theoretical Physics and Applied Mathematics, Ural Federal University, 19 Mira Street, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeCornils, L., Institute for Nanostructure and Solid State Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.employeeLichtenstein, A.I., I. Institute of Theoretical Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany, Department of Theoretical Physics and Applied Mathematics, Ural Federal University, 19 Mira Street, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeWiebe, J., Institute for Nanostructure and Solid State Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.employeeWiesendanger, R., Institute for Nanostructure and Solid State Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.issue9-
local.volume3-
dc.identifier.wos000488277000003-
local.contributor.departmentI. Institute of Theoretical Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.departmentInstitute for Nanostructure and Solid State Physics, University of Hamburg, Jungiusstraße 9, Hamburg, D-20355, Germany
local.contributor.departmentDepartment of Theoretical Physics and Applied Mathematics, Ural Federal University, 19 Mira Street, Yekaterinburg, 620002, Russian Federation
local.identifier.pure1530e5ee-3ea9-4b37-a874-3e0f6e14997euuid
local.identifier.pure11116327-
local.description.order094801-
local.identifier.eid2-s2.0-85072974023-
local.identifier.wosWOS:000488277000003-
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