Синтез тонких пленок нитрида алюминия методом плазмохимического осаждения

Abstract

Aluminum nitride thin films were grown on a fused quartz, silicon and titanium substrates using the metal organic plasma enhanced chemical vapor deposition (MO-PE CVD). The parameters of the synthesis routine were controlled by the NANOFAB-100 (NT-MDT) plasma-chemical etching and deposition unit. Surface topography and film thickness were characterized by the means of the atomic force microscopy. UV-VIS spectroscopy was applied to measure the optical transmission spectra. Results of the measurements were in a good agreement with the independent data.