Получение и исследование гетероструктур GaP/Si для фотоэлектрических преобразователей

Abstract

Heterostructures GaP/Si for photoelectric converters operating in a wide range of lengths are obtained by the method of pulsed laser sputtering and their structural properties are investigated. Using the AFORS-HET software, the electrical properties of n-GaP/p-Si solar cells were simulated, and the optimum thickness and doping level of the n-GaP layer was established.