Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/92611
Title: Non-radiative relaxation processes in luminescence of InP/ZnS quantum dots
Authors: Savchenko, S. S.
Vokhmintsev, A. S.
Weinstein, I. A.
Issue Date: 2020
Publisher: Institute of Physics Publishing
Citation: Savchenko S. S. Non-radiative relaxation processes in luminescence of InP/ZnS quantum dots / S. S. Savchenko, A. S. Vokhmintsev, I. A. Weinstein. — DOI 10.1088/1742-6596/1537/1/012015 // Journal of Physics: Conference Series. — 2020. — Vol. 1. — Iss. 1537. — 12015.
Abstract: Photoluminescence (PL) thermal quenching of InP/ZnS core/shell nanocrystals of 4.2 (QD-1) and 4.6 (QD-2) nm in diameter is investigated in the temperature range of 6.5-296 K. Observed PL spectra are found to originate from exciton and defect-related transitions. Temperature behavior of the emission bands indicates effects of inhomogeneous broadening due to distributions of quantum dots parameters in the ensembles. PL thermal quenching analysis unveils two non-radiative relaxation channels for each band in both samples. Activation energies of 130 and 119 meV in QD-1 and QD-2, correspondingly, for the exciton band can be assigned to the bright-bright splitting of the exciton fine structure. © Published under licence by IOP Publishing Ltd.
Keywords: ACTIVATION ENERGY
EXCITONS
III-V SEMICONDUCTORS
INDIUM PHOSPHIDE
NANOSTRUCTURED MATERIALS
QUENCHING
SEMICONDUCTING INDIUM PHOSPHIDE
SEMICONDUCTOR QUANTUM DOTS
CORE/SHELL NANOCRYSTALS
EMISSION BANDS
EXCITON FINE STRUCTURE
INHOMOGENEOUS BROADENING
NON-RADIATIVE RELAXATION
TEMPERATURE BEHAVIOR
TEMPERATURE RANGE
THERMAL QUENCHING
NANOCRYSTALS
URI: http://elar.urfu.ru/handle/10995/92611
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85089510862
PURE ID: 13683674
ISSN: 17426588
DOI: 10.1088/1742-6596/1537/1/012015
metadata.dc.description.sponsorship: Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS): 727-2015
Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS)
We gratefully acknowledge the financial support received from the Departamento Administrativo de Ciencia, Tecnología e Innovación, Colciencias, Colombia, through Convocatoria No. 727-2015. The authors would also like to thank the administrative support received from the Centro de Investigación para el Desarrollo y la Innovación (CIDI) of the Universidad Pontificia Bolivariana.
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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