Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate

Esin, A. A.; Akhmatkhanov, A. R.; Shur, V. Ya.

doi:10.18502/kms.v1i1.563

Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/63276

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DC Field	Value	Language
dc.contributor.author	Esin, A. A.	en
dc.contributor.author	Akhmatkhanov, A. R.	en
dc.contributor.author	Shur, V. Ya.	en
dc.date.accessioned	2018-10-21T17:37:12Z	-
dc.date.available	2018-10-21T17:37:12Z	-
dc.date.issued	2016	-
dc.identifier.citation	Esin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563	en
dc.identifier.issn	2519-1438	-
dc.identifier.uri	http://hdl.handle.net/10995/63276	-
dc.description.abstract	We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.	en
dc.description.sponsorship	The equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Knowledge E	en
dc.relation.ispartof	IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016	en
dc.subject	DIELECTRIC RELAXATION	en
dc.subject	FERROELECTRICS	en
dc.subject	DOMAIN STRUCTURE	en
dc.title	Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate	en
dc.type	Conference Paper	en
dc.type	info:eu-repo/semantics/conferenceObject	en
dc.type	info:eu-repo/semantics/publishedVersion	en
dc.conference.name	IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology	en
dc.conference.date	23.06.2016-26.06.2016	-
dc.identifier.doi	10.18502/kms.v1i1.563	-
local.description.firstpage	57	-
local.description.lastpage	63	-
dc.identifier.wos	WOS:000395106000011	-
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