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http://elar.urfu.ru/handle/10995/63276
Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Esin, A. A. | en |
dc.contributor.author | Akhmatkhanov, A. R. | en |
dc.contributor.author | Shur, V. Ya. | en |
dc.contributor.author | Шур, В. Я. | ru |
dc.date.accessioned | 2018-10-21T17:37:12Z | - |
dc.date.available | 2018-10-21T17:37:12Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Esin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563 | en |
dc.identifier.issn | 2519-1438 | - |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/63276 | - |
dc.description.abstract | We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls. | en |
dc.description.sponsorship | The equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006). | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | Knowledge E | en |
dc.relation.ispartof | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016 | en |
dc.subject | DIELECTRIC RELAXATION | en |
dc.subject | FERROELECTRICS | en |
dc.subject | DOMAIN STRUCTURE | en |
dc.title | Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate | en |
dc.type | Conference Paper | en |
dc.type | info:eu-repo/semantics/conferenceObject | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.conference.name | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology | en |
dc.conference.date | 23.06.2016-26.06.2016 | - |
dc.identifier.doi | 10.18502/kms.v1i1.563 | - |
local.description.firstpage | 57 | - |
local.description.lastpage | 63 | - |
dc.identifier.wos | WOS:000395106000011 | - |
Располагается в коллекциях: | АТУРК |
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Файл | Описание | Размер | Формат | |
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kms.v1i1.563.pdf | 2 MB | Adobe PDF | Просмотреть/Открыть |
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