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dc.contributor.authorEsin, A. A.en
dc.contributor.authorAkhmatkhanov, A. R.en
dc.contributor.authorShur, V. Ya.en
dc.contributor.authorШур, В. Я.ru
dc.date.accessioned2018-10-21T17:37:12Z-
dc.date.available2018-10-21T17:37:12Z-
dc.date.issued2016-
dc.identifier.citationEsin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563en
dc.identifier.issn2519-1438-
dc.identifier.urihttp://elar.urfu.ru/handle/10995/63276-
dc.description.abstractWe present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.en
dc.description.sponsorshipThe equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherKnowledge Een
dc.relation.ispartofIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016en
dc.subjectDIELECTRIC RELAXATIONen
dc.subjectFERROELECTRICSen
dc.subjectDOMAIN STRUCTUREen
dc.titleDielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobateen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.conference.nameIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technologyen
dc.conference.date23.06.2016-26.06.2016-
dc.identifier.doi10.18502/kms.v1i1.563-
local.description.firstpage57-
local.description.lastpage63-
dc.identifier.wosWOS:000395106000011-
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