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http://elar.urfu.ru/handle/10995/63276
Title: | Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate |
Authors: | Esin, A. A. Akhmatkhanov, A. R. Shur, V. Ya. Шур, В. Я. |
Issue Date: | 2016 |
Publisher: | Knowledge E |
Citation: | Esin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563 |
Abstract: | We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls. |
Keywords: | DIELECTRIC RELAXATION FERROELECTRICS DOMAIN STRUCTURE |
URI: | http://elar.urfu.ru/handle/10995/63276 |
Conference name: | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology |
Conference date: | 23.06.2016-26.06.2016 |
WOS ID: | WOS:000395106000011 |
ISSN: | 2519-1438 |
DOI: | 10.18502/kms.v1i1.563 |
metadata.dc.description.sponsorship: | The equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006). |
Origin: | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016 |
Appears in Collections: | АТУРК |
Files in This Item:
File | Description | Size | Format | |
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kms.v1i1.563.pdf | 2 MB | Adobe PDF | View/Open |
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