Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/63276
Title: Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate
Authors: Esin, A. A.
Akhmatkhanov, A. R.
Shur, V. Ya.
Issue Date: 2016
Publisher: Knowledge E
Citation: Esin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563
Abstract: We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.
Keywords: DIELECTRIC RELAXATION
FERROELECTRICS
DOMAIN STRUCTURE
URI: http://hdl.handle.net/10995/63276
Conference name: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology
Conference date: 23.06.2016-26.06.2016
WOS ID: WOS:000395106000011
ISSN: 2519-1438
DOI: 10.18502/kms.v1i1.563
metadata.dc.description.sponsorship: The equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).
Origin: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016
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