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|Title:||Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate|
|Authors:||Esin, A. A.|
Akhmatkhanov, A. R.
Shur, V. Ya.
|Citation:||Esin A. A. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / A. A. Esin, A. R. Akhmatkhanov, V. Ya. Shur // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 57-63. — DOI: 10.18502/kms.v1i1.563|
|Abstract:||We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.|
|Conference name:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology|
|metadata.dc.description.sponsorship:||The equipment of the Ural Center for Shared Use “Modern Nanotechnology” at UrFU was used. The research was made possible by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).|
|Origin:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016|
|Appears in Collections:||АТУРК|
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