Photoelectric and electric properties of four-component copper chalcogenides

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/51448

Title:	Photoelectric and electric properties of four-component copper chalcogenides
Authors:	Saipulaeva, L. A. Gabibov, F. S. Mel'nikova, N. V. Alibekov, A. G. Kheifets, O. L. Babushkin, A. N. Kurochka, K. V.
Issue Date:	2012
Publisher:	Trans Tech Publications, Ltd.
Citation:	Photoelectric and electric properties of four-component copper chalcogenides / L. A. Saipulaeva, F. S. Gabibov, N. V. Mel'nikova, A. G. Alibekov, O. L. Kheifets, A. N. Babushkin, K. V. Kurochka // Journal of Experimental and Theoretical Physics. — 2012. — Vol. 115. — № 5. — P. 918-924.
Abstract:	The results of investigation of the electrophysical and photoelectric properties of complex copper chalcogenides are presented, namely, the properties of CuSnAsSe3, which exhibits ferroelectric properties, and CuInAsS3, which exhibits ionic conductivity. The spectral and temperature regions of photosensitivity of these crystals are determined. The depth of the level of carrier trapping centers, which manifest themselves under thermal activation, are evaluated from the analysis of thermally stimulated conductivity (TSC) curves in CuInAsS3. © 2012 Pleiades Publishing, Ltd.
URI:	http://elar.urfu.ru/handle/10995/51448
SCOPUS ID:	84876843223
WOS ID:	000312582700019
PURE ID:	1072565
ISSN:	1063-7761 1090-6509
DOI:	10.1134/S1063776112100111
Appears in Collections:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Files in This Item:

There are no files associated with this item.