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Title: Low-energy charge transfer excitations in NiO
Authors: Sokolov, V. I.
Pustovarov, V. A.
Churmanov, V. N.
Ivanov, V. Yu.
Yermakov, A. Ye.
Uimin, M. A.
Gruzdev, N. B.
Sokolov, P. S.
Baranov, A. N.
Moskvin, A. S.
Пустоваров, В. А.
Issue Date: 2012
Abstract: Comparative analysis of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of NiO poly- and nanocrystals in the spectral range 2-5.5 eV reveals two PLE bands peaked near 3.7 and 4.6 eV with a dramatic rise in the low-temperature PLE spectral weight of the 3.7 eV PLE band in the nanocrystalline NiO as compared with its polycrystalline counterpart. In frames of a cluster model approach we assign the 3.7 eV PLE band to the low-energy bulk-forbidden p-d (t1g(π)-eg) charge transfer (CT) transition which becomes the allowed one in the nanocrystalline state while the 4.6 eV PLE band is related to a bulk allowed d-d (eg-eg) CT transition scarcely susceptible to the nanocrystallization. The PLE spectroscopy of the nanocrystalline materials appears to be a novel informative technique for inspection of different CT transitions. © Published under licence by IOP Publishing Ltd.
metadata.dc.rights: info:eu-repo/semantics/openAccess
Conference name: International Conference on Functional Materials and Nanotechnologies, FM and NT 2012
Conference date: 17.04.2012-20.04.2012
SCOPUS ID: 84874086273
WOS ID: 000309665200007
PURE ID: 1595521
ISSN: 1757-8981
DOI: 10.1088/1757-899X/38/1/012007
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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