Influence of copper intercalation on the resistive state of compounds in the Cu-HfSe2 system

Abstract

Polycrystalline samples of intercalated compounds Cu xHfSe 2 have been synthesized for the first time and their electrical resistivity has been measured at both direct current and alternating current (with a frequency ranging from 200 Hz to 150 kHz) in the temperature range 80-300 K. It has been shown that the intercalation of copper atoms between three-layer Se-Hf-Se blocks leads to an increase in the electrical resistivity of the samples, as well as to a more pronounced activated character of the temperature dependence of the electrical resistivity. A time dependence of the electrical resistivity of the Cu xHfSe 2 samples at room temperature, which is associated with the presence of copper ions in the sample, has been determined. © 2012 Pleiades Publishing, Ltd.