ТЕРМИЧЕСКИ ИНДУЦИРОВАННОЕ РЕЗИСТИВНОЕ ПЕРЕКЛЮЧЕНИЕ В МЕМРИСТИВНОЙ СТРУКТУРЕ ВТОРОГО РОДА НА ОСНОВЕ НАНОТУБУЛЯРНОГО ДИОКСИДА ЦИРКОНИЯ

Abstract

The zirconia-based memristive structure demonstrated the formation and rupture of quantum and ohmic conductive filaments under electrical and thermal impact. Parameters of the insulator layer were derived from conduction mechanism models. Equivalent circuits were proposed for all resistive states.