Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/131406
Title: | Kinetic Properties of a Topological Semimetal WTe2 Single Crystal |
Authors: | Perevalova, A. N. Naumov, S. V. Podgornykh, S. M. Chistyakov, V. V. Marchenkova, E. B. Fominykh, B. M. Marchenkov, V. V. |
Issue Date: | 2022 |
Publisher: | Pleiades Publishing |
Citation: | Perevalova, AN, Naumov, SV, Podgornykh, SM, Chistyakov, VV, Marchenkova, EB, Fominykh, BM & Marchenkov, VV 2022, 'Kinetic Properties of a Topological Semimetal WTe2 Single Crystal', Physics of Metals and Metallography, Том. 123, № 11, стр. 1061-1067. https://doi.org/10.1134/S0031918X22601329 Perevalova, A. N., Naumov, S. V., Podgornykh, S. M., Chistyakov, V. V., Marchenkova, E. B., Fominykh, B. M., & Marchenkov, V. V. (2022). Kinetic Properties of a Topological Semimetal WTe2 Single Crystal. Physics of Metals and Metallography, 123(11), 1061-1067. https://doi.org/10.1134/S0031918X22601329 |
Abstract: | Abstract: Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a single crystal of topological semimetal WTe2 in the temperature range from 12 to 200 K under magnetic fields up to 9 T. A quadratic temperature dependence of the electrical resistivity in the absence of field and conductivity in a magnetic field is found at low temperatures, which appears to be associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron–hole compensation with a slight predominance of electron charge carriers. © 2022, Pleiades Publishing, Ltd. |
Keywords: | ELECTRICAL RESISTIVITY HALL EFFECT MAGNETORESISTIVITY QUADRATIC TEMPERATURE DEPENDENCE SINGLE CRYSTAL TOPOLOGICAL SEMIMETAL WTE2 ELECTRIC CONDUCTIVITY ELECTRIC CURRENTS SINGLE CRYSTALS TELLURIUM COMPOUNDS TEMPERATURE DISTRIBUTION TOPOLOGY TUNGSTEN COMPOUNDS ELECTRICAL RESISTIVITY KINETIC PROPERTIES LOWS-TEMPERATURES MAGNETIC-FIELD QUADRATIC TEMPERATURE QUADRATIC TEMPERATURE DEPENDENCE SCATTERING MECHANISMS TEMPERATURE DEPENDENCE TEMPERATURE RANGE TOPOLOGICAL SEMIMETAL WTE2 HALL EFFECT |
URI: | http://elar.urfu.ru/handle/10995/131406 |
Access: | info:eu-repo/semantics/openAccess |
RSCI ID: | 59580676 |
SCOPUS ID: | 85145003308 |
WOS ID: | 000931264400003 |
PURE ID: | 8c9708a9-074b-424b-9344-f38dfec0bb1f 34712460 |
ISSN: | 0031-918X |
DOI: | 10.1134/S0031918X22601329 |
metadata.dc.description.sponsorship: | Scholarship of the President of the Russian Federation, (SP-2705.2022.1) Ministry of Education and Science of the Russian Federation, Minobrnauka, (122021000036-3) Russian Science Foundation, RSF, (22-42-02021) Electrical resistivity studies (sect. 3.1) were performed within the framework of State assignment of the Ministry of Science and Higher Education of the Russian Federation (theme Spin, no. 122021000036-3), supported in part by the Scholarship of the President of the Russian Federation to young scientists and graduate students (A.N. Perevalova, SP-2705.2022.1). Studies on the magnetoresistivity (sect. 3.2) and the Hall effect (section 3.3) were supported by the Russian Science Foundation (grant no. 22-42-02021). |
RSCF project card: | 22-42-02021 |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
Files in This Item:
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2-s2.0-85145003308.pdf | 1,18 MB | Adobe PDF | View/Open |
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