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Название: Kinetic Properties of a Topological Semimetal WTe2 Single Crystal
Авторы: Perevalova, A. N.
Naumov, S. V.
Podgornykh, S. M.
Chistyakov, V. V.
Marchenkova, E. B.
Fominykh, B. M.
Marchenkov, V. V.
Дата публикации: 2022
Издатель: Pleiades Publishing
Библиографическое описание: Perevalova, AN, Naumov, SV, Podgornykh, SM, Chistyakov, VV, Marchenkova, EB, Fominykh, BM & Marchenkov, VV 2022, 'Kinetic Properties of a Topological Semimetal WTe2 Single Crystal', Physics of Metals and Metallography, Том. 123, № 11, стр. 1061-1067. https://doi.org/10.1134/S0031918X22601329
Perevalova, A. N., Naumov, S. V., Podgornykh, S. M., Chistyakov, V. V., Marchenkova, E. B., Fominykh, B. M., & Marchenkov, V. V. (2022). Kinetic Properties of a Topological Semimetal WTe2 Single Crystal. Physics of Metals and Metallography, 123(11), 1061-1067. https://doi.org/10.1134/S0031918X22601329
Аннотация: Abstract: Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a single crystal of topological semimetal WTe2 in the temperature range from 12 to 200 K under magnetic fields up to 9 T. A quadratic temperature dependence of the electrical resistivity in the absence of field and conductivity in a magnetic field is found at low temperatures, which appears to be associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron–hole compensation with a slight predominance of electron charge carriers. © 2022, Pleiades Publishing, Ltd.
Ключевые слова: ELECTRICAL RESISTIVITY
HALL EFFECT
MAGNETORESISTIVITY
QUADRATIC TEMPERATURE DEPENDENCE
SINGLE CRYSTAL
TOPOLOGICAL SEMIMETAL WTE2
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
SINGLE CRYSTALS
TELLURIUM COMPOUNDS
TEMPERATURE DISTRIBUTION
TOPOLOGY
TUNGSTEN COMPOUNDS
ELECTRICAL RESISTIVITY
KINETIC PROPERTIES
LOWS-TEMPERATURES
MAGNETIC-FIELD
QUADRATIC TEMPERATURE
QUADRATIC TEMPERATURE DEPENDENCE
SCATTERING MECHANISMS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TOPOLOGICAL SEMIMETAL WTE2
HALL EFFECT
URI: http://elar.urfu.ru/handle/10995/131406
Условия доступа: info:eu-repo/semantics/openAccess
Идентификатор SCOPUS: 85145003308
Идентификатор WOS: 000931264400003
Идентификатор PURE: 34712460
8c9708a9-074b-424b-9344-f38dfec0bb1f
ISSN: 0031-918X
DOI: 10.1134/S0031918X22601329
Сведения о поддержке: Scholarship of the President of the Russian Federation, (SP-2705.2022.1)
Ministry of Education and Science of the Russian Federation, Minobrnauka, (122021000036-3)
Russian Science Foundation, RSF, (22-42-02021)
Electrical resistivity studies (sect. 3.1) were performed within the framework of State assignment of the Ministry of Science and Higher Education of the Russian Federation (theme Spin, no. 122021000036-3), supported in part by the Scholarship of the President of the Russian Federation to young scientists and graduate students (A.N. Perevalova, SP-2705.2022.1). Studies on the magnetoresistivity (sect. 3.2) and the Hall effect (section 3.3) were supported by the Russian Science Foundation (grant no. 22-42-02021).
Карточка проекта РНФ: 22-42-02021
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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