Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/131386
Title: | Anomalous electron polarizability of HgTe quantum wells |
Authors: | Aleshkin, V. Y. Germanenko, A. V. Minkov, G. M. Sherstobitov, A. A. |
Issue Date: | 2022 |
Publisher: | Elsevier B.V. |
Citation: | Aleshkin, VY, Germanenko, AV, Minkov, GM & Sherstobitov, AA 2021, 'Anomalous electron polarizability of HgTe quantum wells', Physica E: Low-Dimensional Systems and Nanostructures, Том. 128, 114606. https://doi.org/10.1016/j.physe.2020.114606 Aleshkin, V. Y., Germanenko, A. V., Minkov, G. M., & Sherstobitov, A. A. (2021). Anomalous electron polarizability of HgTe quantum wells. Physica E: Low-Dimensional Systems and Nanostructures, 128, [114606]. https://doi.org/10.1016/j.physe.2020.114606 |
Abstract: | The polarizability of electrons in CdTe/CdxHg1−xTe/CdTe quantum wells is studied. It is shown that polarizability in the quantum well without cadmium is negative, i.e., the displacement of an electron and hole in the main subbands of spatial quantization in an electric field applied perpendicularly to the quantum well plane is opposite to the force acting on it. It is predicted that the negative polarizability can reduce the dielectric constant of quantum wells by up to 15% and manifest itself as the blue shift of the interband light absorption edge in an electric field. © 2020 Elsevier B.V. |
Keywords: | ELECTRON POLARIZABILITY GAPLESS SEMICONDUCTOR QUANTUM WELLS BLUE SHIFT CADMIUM TELLURIDE ELECTRIC FIELDS II-VI SEMICONDUCTORS LIGHT ABSORPTION MERCURY COMPOUNDS POLARIZATION INTERBAND LIGHT ABSORPTION POLARIZABILITIES SPATIAL QUANTIZATION SUBBANDS SEMICONDUCTOR QUANTUM WELLS |
URI: | http://elar.urfu.ru/handle/10995/131386 |
Access: | info:eu-repo/semantics/openAccess |
RSCI ID: | 45029206 |
SCOPUS ID: | 85098861535 |
WOS ID: | 000618052300005 |
PURE ID: | 20450630 a0abcaca-24b6-4fae-aac8-5b6d7b16bea8 |
ISSN: | 1386-9477 |
DOI: | 10.1016/j.physe.2020.114606 |
metadata.dc.description.sponsorship: | Russian Foundation for Basic Research, РФФИ, (18-02-00050) Ministry of Science and Higher Education of the Russian Federation, (-2020-0054, 0035-2019-0020-C-01) The work has been supported in part by the Russian Foundation for Basic Research (Grant #18-02-00050 ), by Act 211 Government of the Russian Federation , agreement #02.A03.21.0006 , by the Ministry of Science and Higher Education of the Russian Federation under Projects #0035-2019-0020-C-01 and #FEUZ-2020-0054 . |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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