Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/131386
Title: Anomalous electron polarizability of HgTe quantum wells
Authors: Aleshkin, V. Y.
Germanenko, A. V.
Minkov, G. M.
Sherstobitov, A. A.
Issue Date: 2022
Publisher: Elsevier B.V.
Citation: Aleshkin, VY, Germanenko, AV, Minkov, GM & Sherstobitov, AA 2021, 'Anomalous electron polarizability of HgTe quantum wells', Physica E: Low-Dimensional Systems and Nanostructures, Том. 128, 114606. https://doi.org/10.1016/j.physe.2020.114606
Aleshkin, V. Y., Germanenko, A. V., Minkov, G. M., & Sherstobitov, A. A. (2021). Anomalous electron polarizability of HgTe quantum wells. Physica E: Low-Dimensional Systems and Nanostructures, 128, [114606]. https://doi.org/10.1016/j.physe.2020.114606
Abstract: The polarizability of electrons in CdTe/CdxHg1−xTe/CdTe quantum wells is studied. It is shown that polarizability in the quantum well without cadmium is negative, i.e., the displacement of an electron and hole in the main subbands of spatial quantization in an electric field applied perpendicularly to the quantum well plane is opposite to the force acting on it. It is predicted that the negative polarizability can reduce the dielectric constant of quantum wells by up to 15% and manifest itself as the blue shift of the interband light absorption edge in an electric field. © 2020 Elsevier B.V.
Keywords: ELECTRON POLARIZABILITY
GAPLESS SEMICONDUCTOR
QUANTUM WELLS
BLUE SHIFT
CADMIUM TELLURIDE
ELECTRIC FIELDS
II-VI SEMICONDUCTORS
LIGHT ABSORPTION
MERCURY COMPOUNDS
POLARIZATION
INTERBAND LIGHT ABSORPTION
POLARIZABILITIES
SPATIAL QUANTIZATION
SUBBANDS
SEMICONDUCTOR QUANTUM WELLS
URI: http://elar.urfu.ru/handle/10995/131386
Access: info:eu-repo/semantics/openAccess
RSCI ID: 45029206
SCOPUS ID: 85098861535
WOS ID: 000618052300005
PURE ID: 20450630
a0abcaca-24b6-4fae-aac8-5b6d7b16bea8
ISSN: 1386-9477
DOI: 10.1016/j.physe.2020.114606
metadata.dc.description.sponsorship: Russian Foundation for Basic Research, РФФИ, (18-02-00050)
Ministry of Science and Higher Education of the Russian Federation, (-2020-0054, 0035-2019-0020-C-01)
The work has been supported in part by the Russian Foundation for Basic Research (Grant #18-02-00050 ), by Act 211 Government of the Russian Federation , agreement #02.A03.21.0006 , by the Ministry of Science and Higher Education of the Russian Federation under Projects #0035-2019-0020-C-01 and #FEUZ-2020-0054 .
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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