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http://elar.urfu.ru/handle/10995/117838
Название: | Thermal quenching of self-trapped exciton luminescence in nanostructured hafnia |
Авторы: | Shilov, A. O. Savchenko, S. S. Vokhmintsev, A. S. Gritsenko, V. A. Weinstein, I. A. |
Дата публикации: | 2022 |
Библиографическое описание: | Thermal quenching of self-trapped exciton luminescence in nanostructured hafnia / A. O. Shilov, S. S. Savchenko, A. S. Vokhmintsev et al. // Journal of Luminescence. — 2022. — Vol. 247. — 118908. |
Аннотация: | The intrinsic optical properties and peculiarities of the energy structure of hafnium dioxide largely determine the prospects for applying the latter in new generation devices of optoelectronics and nanoelectronics. In this work, we have studied the diffuse reflectance spectra at room temperature for a nanostructured powder of nominally pure HfO2 with a monoclinic crystal structure and, as well its photoluminescence in the temperature range of 40–300 K. We have also estimated the bandgap Eg under the assumption made for indirect (5.31 eV) and direct (5.61 eV) allowed transitions. We have detected emission with a 4.2 eV maximum at T < 200 K and conducted an analysis of the experimental dependencies to evaluate the activation energies of thermal quenching (140 meV) and enhancement (3 meV) processes. Accounting for both the temperature behavior of the spectral characteristics and the estimation of the Huang-Rhys factor S » 1 has shown that radiative decay of self-trapped excitons forms the mechanism of the indicated emission. In this case, the localization is mainly due to the interaction of holes with active vibrational modes of oxygen atoms in non-equivalent (O3f and O4f) crystal positions. Thorough study of the discussed excitonic effects can advance development of hafnia-based structures with a controlled optical response. © 2022 Elsevier B.V. |
Ключевые слова: | EXCITON-PHONON INTERACTION HUANG-RHYS FACTOR INDIRECT, AND DIRECT ALLOWED TRANSITIONS LUMINESCENCE TEMPERATURE QUENCHING MONOCLINIC HFO2 SELF-TRAPPED EXCITON ACTIVATION ANALYSIS ACTIVATION ENERGY CRYSTAL STRUCTURE EXCITONS LUMINESCENCE OPTICAL PROPERTIES QUENCHING EXCITON-PHONON INTERACTIONS HUANG-RHYS FACTORS INDIRECT, AND DIRECT ALLOWED TRANSITION LUMINESCENCE TEMPERATURE QUENCHING MONOCLINIC HFO2 MONOCLINICS NANO-STRUCTURED SELF TRAPPED EXCITONS SELF-TRAPPED EXCITON LUMINESCENCES THERMAL QUENCHING HAFNIUM OXIDES |
URI: | http://elar.urfu.ru/handle/10995/117838 |
Условия доступа: | info:eu-repo/semantics/openAccess |
Идентификатор SCOPUS: | 85128578060 |
Идентификатор WOS: | 000860793500005 |
Идентификатор PURE: | 30097480 |
DOI: | 10.1016/j.jlumin.2022.118908 |
Сведения о поддержке: | FEUZ-2020-0059 The work was supported by Minobrnauki research project FEUZ-2020-0059. The authors are grateful to the Shared Access Center “Composition of Compounds” of the IHTE UB RAS, Ekaterinburg for help in XRD and Raman characterization of the hafnia powder. The work was supported by Minobrnauki research project FEUZ-2020-0059 . The authors are grateful to the Shared Access Center “Composition of Compounds” of the IHTE UB RAS, Ekaterinburg for help in XRD and Raman characterization of the hafnia powder. |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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Файл | Описание | Размер | Формат | |
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2-s2.0-85128578060.pdf | 1,28 MB | Adobe PDF | Просмотреть/Открыть |
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