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|Title:||Characterization of Excessive Sm3+containing Barium Titanate Prepared by Tartrate Precursor Method|
|Authors:||Henaish, A. M. A.|
Hemeda, O. M.
Dorgham, A. M.
Hamad, M. A.
|Publisher:||Elsevier Editora Ltda|
|Citation:||Characterization of Excessive Sm3+containing Barium Titanate Prepared by Tartrate Precursor Method / A. M. A. Henaish, O. M. Hemeda, A. M. Dorgham et al. // Journal of Materials Research and Technology. — 2020. — Vol. 9. — Iss. 6. — P. 15214-15221.|
|Abstract:||The [Formula presented](BST) samples, where (x = zero, 0.05, 0.1, 0.15, 0.2 and 0.3), have been successfully synthesized by tartrate precursor method at annealing temperature of 600°C under atmospheric pressure. The results revealed that the Sm content causes a decrease in both tetragonality and average grain size of BST samples. The electrical resistivity of BST samples is improved by low Sm content, reaching maximum value at x = 0.15 and then decreases with higher Sm content, suggesting that the conduction has two types of polaron hoping and semiconductor band conduction mechanisms at low and at high temperature ranges, respectively. It is demonstrated that the majority of charge carriers are p-type. The dielectric properties varies nonmonotonically with samarium content, showing strongly enhancement in dielectric constant for high Sm doping samples. It is recommended that BST samples are attractive for capacitor and energy storage applications. © 2020 The Author(s).|
AVERAGE GRAIN SIZE
BAND CONDUCTION MECHANISM
HIGH TEMPERATURE RANGE
|metadata.dc.description.sponsorship:||This project was supported financially by the Academy of Scientific Research and Technology (ASRT) Egypt, Grant No. 6550 . ASRT is the 2nd affiliation of this research.|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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