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dc.contributor.authorHenaish, A. M. A.en
dc.contributor.authorHemeda, O. M.en
dc.contributor.authorDorgham, A. M.en
dc.contributor.authorHamad, M. A.en
dc.date.accessioned2022-05-12T08:26:36Z-
dc.date.available2022-05-12T08:26:36Z-
dc.date.issued2020-
dc.identifier.citationCharacterization of Excessive Sm3+containing Barium Titanate Prepared by Tartrate Precursor Method / A. M. A. Henaish, O. M. Hemeda, A. M. Dorgham et al. // Journal of Materials Research and Technology. — 2020. — Vol. 9. — Iss. 6. — P. 15214-15221.en
dc.identifier.issn2238-7854-
dc.identifier.otherAll Open Access, Gold3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111981-
dc.description.abstractThe [Formula presented](BST) samples, where (x = zero, 0.05, 0.1, 0.15, 0.2 and 0.3), have been successfully synthesized by tartrate precursor method at annealing temperature of 600°C under atmospheric pressure. The results revealed that the Sm content causes a decrease in both tetragonality and average grain size of BST samples. The electrical resistivity of BST samples is improved by low Sm content, reaching maximum value at x = 0.15 and then decreases with higher Sm content, suggesting that the conduction has two types of polaron hoping and semiconductor band conduction mechanisms at low and at high temperature ranges, respectively. It is demonstrated that the majority of charge carriers are p-type. The dielectric properties varies nonmonotonically with samarium content, showing strongly enhancement in dielectric constant for high Sm doping samples. It is recommended that BST samples are attractive for capacitor and energy storage applications. © 2020 The Author(s).en
dc.description.sponsorshipThis project was supported financially by the Academy of Scientific Research and Technology (ASRT) Egypt, Grant No. 6550 . ASRT is the 2nd affiliation of this research.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier Editora Ltdaen1
dc.publisherElsevier BVen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Mater. Res. Technol.2
dc.sourceJournal of Materials Research and Technologyen
dc.subjectDC CONDUCTIVITYen
dc.subjectDIELECTRIC CONSTANTen
dc.subjectSEEBECK COEFFICIENTen
dc.subjectSM-DOPED BATIO3en
dc.subjectBARIUM TITANATEen
dc.subjectDIELECTRIC PROPERTIESen
dc.subjectSAMARIUMen
dc.subjectSAMARIUM COMPOUNDSen
dc.subjectSEMICONDUCTOR DOPINGen
dc.subjectANNEALING TEMPERATURESen
dc.subjectAVERAGE GRAIN SIZEen
dc.subjectBAND CONDUCTION MECHANISMen
dc.subjectDC CONDUCTIVITYen
dc.subjectHIGH TEMPERATURE RANGEen
dc.subjectP-TYPEen
dc.subjectPRECURSOR METHODen
dc.subjectSM-DOPED BATIO3en
dc.subjectSYNTHESISEDen
dc.subjectTETRAGONALITYen
dc.subjectATMOSPHERIC PRESSUREen
dc.titleCharacterization of Excessive Sm3+containing Barium Titanate Prepared by Tartrate Precursor Methoden
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.scopus85116327189-
local.contributor.employeeHenaish, A.M.A., Physics Department, Faculty of Science, Tanta University, Tanta, Egypt, Ural Federal University, NANOTECH Center, Yekaterinburg, 620002, Russian Federation; Hemeda, O.M., Physics Department, Faculty of Science, Tanta University, Tanta, Egypt; Dorgham, A.M., Basic Science Department, Higher Institute of Engineering and Technology, Tanta, Egypt; Hamad, M.A., Basic Science Department, Higher Institute of Engineering & Technology, King Marriott Academy, Alexandria, Egypten
local.description.firstpage15214-
local.description.lastpage15221-
local.issue6-
local.volume9-
local.contributor.departmentPhysics Department, Faculty of Science, Tanta University, Tanta, Egypt; Ural Federal University, NANOTECH Center, Yekaterinburg, 620002, Russian Federation; Basic Science Department, Higher Institute of Engineering and Technology, Tanta, Egypt; Basic Science Department, Higher Institute of Engineering & Technology, King Marriott Academy, Alexandria, Egypten
local.identifier.pure20907332-
local.identifier.eid2-s2.0-85116327189-
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