Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111847
Title: Low-Temperature Luminescence of Lead Silicate Glass
Authors: Zatsepin, A. F.
Kukharenko, A. I.
Buntov, E. A.
Pustovarov, V. A.
Cholakh, S. O.
Issue Date: 2010
Publisher: Pleiades Publishing Ltd
Citation: Low-Temperature Luminescence of Lead Silicate Glass / A. F. Zatsepin, A. I. Kukharenko, E. A. Buntov et al. // Glass Physics and Chemistry. — 2010. — Vol. 36. — Iss. 2. — P. 166-170.
Abstract: The temperature quenching of intrinsic luminescence of a lead silicate glass of the 20PbO · 80SiO2 composition has been investigated in the temperature range 7-200 K. It has been found that the temperature behavior of the intensity of intrinsic luminescence does not obey the well-known Mott's law for intracenter quenching of luminescence but is adequately described by the empirical Street's formula. It has been dem-onstrated that, with allowance made for the disorder of the atomic structure, the experimental temperature dependence of the luminescence intensity of the glass can be represented as a superposition of Mott's depen-dences for an ensemble of local luminescence centers. The obtained distribution of luminescence centers over the activation energies of quenching has an asymmetric form with prevailing low-energy states. It has been assumed that this feature has a general character and, at low temperatures, determines the specificity of the processes of nonradiative relaxation of the electronic subsystem for many oxide glasses. © Pleiades Publishing, Ltd., 2010.
Keywords: ENERGY DISTRIBUTION OF LUMINESCENCE CENTERS
LUMINESCENCE
PHOTOEXCITATION RELAXATION
STREET'S LAW
STRUCTURAL DISORDER
TEMPERATURE QUENCHING
ATOMIC STRUCTURE
ELECTRONIC SUBSYSTEMS
INTRINSIC LUMINESCENCE
LEAD SILICATE GLASS
LOW TEMPERATURES
LOW-ENERGY STATE
LOW-TEMPERATURE LUMINESCENCE
LUMINESCENCE CENTERS
LUMINESCENCE INTENSITY
NON-RADIATIVE RELAXATION
OXIDE GLASS
STREET'S LAW
STRUCTURAL DISORDERS
TEMPERATURE BEHAVIOR
TEMPERATURE DEPENDENCE
TEMPERATURE QUENCHING
TEMPERATURE RANGE
ACTIVATION ENERGY
ELECTRIC POWER DISTRIBUTION
GLASS
ION BEAMS
LEAD OXIDE
PHOTOEXCITATION
QUENCHING
SILICATES
URI: http://hdl.handle.net/10995/111847
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 79951566442
ISSN: 1087-6596
metadata.dc.description.sponsorship: This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00493 and 08-02-01072).
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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