Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/111620
Title: Kitkaite NiTeSe, an Ambient-Stable Layered Dirac Semimetal with Low-Energy Type-II Fermions with Application Capabilities in Spintronics and Optoelectronics
Authors: Vobornik, I.
Sarkar, A. B.
Zhang, L.
Boukhvalov, D. W.
Ghosh, B.
Piliai, L.
Kuo, C. -N.
Mondal, D.
Fujii, J.
Lue, C. S.
Vorokhta, M.
Xing, H.
Wang, L.
Agarwal, A.
Politano, A.
Issue Date: 2021
Publisher: John Wiley and Sons Inc
Wiley
Citation: Kitkaite NiTeSe, an Ambient-Stable Layered Dirac Semimetal with Low-Energy Type-II Fermions with Application Capabilities in Spintronics and Optoelectronics / I. Vobornik, A. B. Sarkar, L. Zhang et al. // Advanced Functional Materials. — 2021. — Vol. 31. — Iss. 52. — 2106101.
Abstract: The emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type-II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type-II Dirac fermiology based on spin-resolved angle-resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type-II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (≈50%) spin polarization. By means of surface-science experiments in near-ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe-based devices without encapsulation afford long-term efficiency, as demonstrated by the direct implementation of a NiTeSe-based microwave receiver with a room-temperature photocurrent of 2.8 µA at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type-II Dirac fermions in photonics, spintronics, and optoelectronics. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
Keywords: DENSITY FUNCTIONAL THEORY CALCULATIONS
DEVICE IMPLEMENTATION
DIRAC FERMIONS
SURFACE SCIENCE
TOPOLOGICAL MATERIALS
DENSITY FUNCTIONAL THEORY
FERMI LEVEL
FUNCTIONAL MATERIALS
PHOTOELECTRON SPECTROSCOPY
QUANTUM CHEMISTRY
SPINTRONICS
TOPOLOGY
AMBIENTS
APPLICATION CAPABILITY
DENSITY-FUNCTIONAL THEORY CALCULATIONS
DEVICE IMPLEMENTATION
DIRAC FERMIONS
LOWER ENERGIES
QUANTUM TRANSPORT
SURFACE SCIENCE
TOPOLOGICAL MATERIALS
TYPE II
SPIN POLARIZATION
URI: http://elar.urfu.ru/handle/10995/111620
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85115715421
WOS ID: 000699899600001
PURE ID: 29212887
ISSN: 1616-301X
metadata.dc.description.sponsorship: I.V., A.B.S., and L.Z. contributed equally to this work. L.W. acknowledged support from the State Key Program for Basic Research of China (No. 2017YFA0305500, 2018YFA0306204), Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01), and the Science and Technology Commission of Shanghai Municipality (21ZR1473800). A.P. thanks CERIC‐ERIC for the access to the NAP‐XPS facility. D.W.B. acknowledged support from the Ministry of Science and Higher Education of the Russian Federation (through the basic part of the government mandate, Project No. FEUZ‐2020‐0060) and Jiangsu Innovative and Entrepreneurial Talents Project. This work has been partly performed in the framework of the nanoscience foundry and fine analysis (NFFA‐MUR Italy Progetti Internazionali) facility. A.B, B.G, and A.A. acknowledge funding from Science and Engineering Research Board (SERB) and Department of Science and Technology (DST), government of India. A.A. thanks the HPC facility at IIT Kanpur for computational resources.
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